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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
OP526,005

OP526,005

MOSFET

WeEn Semiconductors

3,735 -

-

* - Tray Active - - - - - - - - - - - - - - -
SI5905BDC-T1-E3

SI5905BDC-T1-E3

MOSFET 2P-CH 8V 4A 1206-8

Vishay Siliconix

3,559 -
SI5905BDC-T1-E3

Технический лист

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
SI5905BDC-T1-GE3

SI5905BDC-T1-GE3

MOSFET 2P-CH 8V 4A 1206-8

Vishay Siliconix

4,590 -
SI5905BDC-T1-GE3

Технический лист

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 80mOhm @ 3.3A, 4.5V 1V @ 250µA 11nC @ 8V 350pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
SI5915BDC-T1-E3

SI5915BDC-T1-E3

MOSFET 2P-CH 8V 4A 1206-8

Vishay Siliconix

2,274 -
SI5915BDC-T1-E3

Технический лист

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
SI5915BDC-T1-GE3

SI5915BDC-T1-GE3

MOSFET 2P-CH 8V 4A 1206-8

Vishay Siliconix

3,602 -
SI5915BDC-T1-GE3

Технический лист

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 8V 4A 70mOhm @ 3.3A, 4.5V 1V @ 250µA 14nC @ 8V 420pF @ 4V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 1206-8 ChipFET™
DMN3022LDG-7

DMN3022LDG-7

MOSFET 2N-CH 30V 7.6A PWRDI3333

Diodes Incorporated

9,187 -
DMN3022LDG-7

Технический лист

- 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.6A (Ta), 15A (Tc) 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V 2.1V @ 250µA, 1.2V @ 250µA 3.7nC @ 4.5V, 8nC @ 4.5V 481pF @ 15V, 996pF @ 15V 1.96W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
DMN3022LFG-7

DMN3022LFG-7

MOSFET 2N-CH 30V 7.6A PWRDI3333

Diodes Incorporated

9,129 -
DMN3022LFG-7

Технический лист

- 8-PowerLDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 7.6A (Ta), 15A (Tc) 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V 2.1V @ 250µA, 1.2V @ 250µA 3.7nC @ 4.5V, 8nC @ 4.5V 481pF @ 15V, 996pF @ 15V 1.96W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI3333-8 (Type D)
SH8K12TB1

SH8K12TB1

MOSFET 2N-CH 30V 5A 8SOP

Rohm Semiconductor

8,084 -
SH8K12TB1

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 5A 42mOhm @ 5A, 10V 2.5V @ 1mA 4nC @ 5V 250pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
DMTH10H038SPDWQ-13

DMTH10H038SPDWQ-13

MOSFET 2N-CH 100V 25A PWRDI50

Diodes Incorporated

3,034 -
DMTH10H038SPDWQ-13

Технический лист

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 25A (Tc) 33mOhm @ 10A, 10V 4V @ 250µA 8nC @ 10V 544pF @ 50V 2.7W (Ta), 39W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
ZXMN3A06DN8TC

ZXMN3A06DN8TC

MOSFET 2N-CH 30V 4.9A 8SO

Diodes Incorporated

4,918 -
ZXMN3A06DN8TC

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
DMTH10H032LPDWQ-13

DMTH10H032LPDWQ-13

MOSFET 2N-CH 100V 24A PWRDI50

Diodes Incorporated

5,489 -
DMTH10H032LPDWQ-13

Технический лист

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 24A (Tc) 32mOhm @ 5A, 10V 2.5V @ 250µA 11.9nC @ 10V 683pF @ 50V 3W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type UXD)
ZXMN3AM832TA

ZXMN3AM832TA

MOSFET 2N-CH 30V 2.9A 8MLP

Diodes Incorporated

54 -
ZXMN3AM832TA

Технический лист

* - Cut Tape (CT) Active - - - - - - - - - - - - - - -
FDG6316P

FDG6316P

MOSFET 2P-CH 12V 0.7A SC88

onsemi

2,689 -
FDG6316P

Технический лист

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 700mA 270mOhm @ 700mA, 4.5V 1.5V @ 250µA 2.4nC @ 4.5V 146pF @ 6V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
SSM6N7002BFU(T5L,F

SSM6N7002BFU(T5L,F

MOSFET 2N-CH 60V 0.2A US6

Toshiba Semiconductor and Storage

2,982 -
SSM6N7002BFU(T5L,F

Технический лист

- 6-TSSOP, SC-88, SOT-363 Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 200mA 2.1Ohm @ 500mA, 10V 3.1V @ 250µA - 17pF @ 25V 300mW 150°C (TJ) - - Surface Mount US6
2N7002KDWA-TP

2N7002KDWA-TP

MOSFET 2N-CH 60V 0.34A SOT363

Micro Commercial Co

4,841 -
2N7002KDWA-TP

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 340mA 5Ohm @ 500mA, 10V 2.5V @ 1mA - 40pF @ 10V 150mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
BSO612CVGHUMA1

BSO612CVGHUMA1

MOSFET N/P-CH 60V 3A/2A 8DSO

Infineon Technologies

5,261 -
BSO612CVGHUMA1

Технический лист

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 60V 3A, 2A 120mOhm @ 3A, 10V 4V @ 20µA 15.5nC @ 10V 340pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
BSO615NGHUMA1

BSO615NGHUMA1

MOSFET 2N-CH 60V 2.6A 8DSO

Infineon Technologies

9,784 -
BSO615NGHUMA1

Технический лист

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 2.6A 150mOhm @ 2.6A, 4.5V 2V @ 20µA 20nC @ 10V 380pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
DMN13M9UCA6-7

DMN13M9UCA6-7

MOSFET 2N-CH X3-DSN3518-6

Diodes Incorporated

7,136 -
DMN13M9UCA6-7

Технический лист

- 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - - - 1.3V @ 1mA 56.5nC @ 4.5V 3315pF @ 6V 2.67W -55°C ~ 150°C (TJ) - - Surface Mount X3-DSN3518-6
AONP36320

AONP36320

MOSFET 2N-CH 30V 26A 8DFN

Alpha & Omega Semiconductor Inc.

4,330 -
AONP36320

Технический лист

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 30V 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc) 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V 2.1V @ 250µA 40nC @ 10V 1700pF @ 15V, 1650pF @ 15V 3.3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN-EP (3.3x3.3)
FDC6432SH

FDC6432SH

MOSFET N/P-CH 30V/12V 2.4A SSOT6

onsemi

6,243 -
FDC6432SH

Технический лист

PowerTrench®, SyncFET™ SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V, 12V 2.4A, 2.5A 90mOhm @ 2.4A, 10V 3V @ 1mA 3.5nC @ 5V 270pF @ 15V 700mW -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
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