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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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QJD1210SA1MOSFET 2N-CH 1200V 100A MODULE |
4,557 | - |
|
Технический лист |
- | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 100A | 17mOhm @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | 8200pF @ 10V | 520W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
QJD1210SB1SIC 1200V 10A MOD |
7,524 | - |
|
- |
* | - | Bulk | Discontinued at Digi-Key | Silicon Carbide (SiC) | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
APTC60TAM21SCTPAGMOSFET 6N-CH 600V 116A SP6-P |
5,946 | - |
|
Технический лист |
CoolMOS™ | Module | Bulk | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 600V | 116A | 21mOhm @ 88A, 10V | 3.6V @ 6mA | 580nC @ 10V | 13000pF @ 100V | 625W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6-P |
|
CCS050M12CM2MOSFET 6N-CH 1200V 87A MODULE |
5,161 | - |
|
- |
Z-FET™ Z-Rec™ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 87A (Tc) | 34mOhm @ 50A, 20V | 2.3V @ 2.5mA | 180nC @ 20V | 2810pF @ 800V | 337W | 150°C (TJ) | - | - | Chassis Mount | Module |
|
WAS110M12BM2RF MOSFET 1200V |
5,967 | - |
|
- |
- | - | Bulk | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
QJD1210SA2MOSFET 2N-CH 1200V 100A MODULE |
4,350 | - |
|
Технический лист |
- | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 100A | 17mOhm @ 100A, 15V | 1.6V @ 34mA | 330nC @ 15V | 8200pF @ 10V | 415W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
APTMC170AM60CT1AGMOSFET 2N-CH 1700V 50A SP1 |
9,853 | - |
|
Технический лист |
- | SP1 | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 50A (Tc) | 60mOhm @ 50A, 20V | 2.3V @ 2.5mA (Typ) | 190nC @ 20V | 3080pF @ 1000V | 350W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP1 |
|
MSCSM70HM05CAGSIC MOSFET |
2,214 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MSCSM70TAM10CTPAGMOSFET 6N-CH 700V 238A SP6-P |
3,512 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 700V | 238A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 674W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6-P |
|
MSCSM70AM025CT6AGMOSFET 700V 538A SP6C |
8,918 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | - | - | 700V | 538A (Tc) | - | - | - | - | - | - | - | - | Chassis Mount | SP6C |
|
MSCSM120TAM16CTPAGMOSFET 6N-CH 1200V 171A SP6-P |
8,055 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 171A (Tc) | 16mOhm @ 80A, 20V | 2.8V @ 2mA | 464nC @ 20V | 6040pF @ 1000V | 728W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6-P |
|
MSCSM120HM083CAGSIC MOSFET |
3,522 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MSCSM120AM042CT6AGMOSFET 2N-CH 1200V 495A SP6C |
7,444 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6C |
|
MSCSM70AM025CT6LIAGMOSFET 2N-CH 700V 689A SP6C LI |
8,656 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 700V | 689A (Tc) | 3.2mOhm @ 240A, 20V | 2.4V @ 24mA (Typ) | 1290nC @ 20V | 27000pF @ 700V | 1882W (Tc) | - | - | - | Chassis Mount | SP6C LI |
|
QJD1210010MOSFET 2N-CH 1200V 100A MODULE |
2,949 | - |
|
Технический лист |
- | Module | Bulk | Discontinued at Digi-Key | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 100A (Tc) | 25mOhm @ 100A, 20V | 5V @ 10mA | 500nC @ 20V | 10200pF @ 800V | 1080W | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
WAS300M12BM2MOSFET 2N-CH 1200V 423A MODULE |
2,778 | - |
|
- |
- | Module | Bulk | Not For New Designs | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 423A (Tc) | 5.3mOhm @ 300A, 20V | 2.5V @ 15mA | 1025nC @ 20V | 19300pF @ 600V | 1.668kW (Tc) | 150°C (TJ) | - | - | Chassis Mount | Module |
|
MSCSM70HM038CAGSIC MOSFET |
3,042 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
QJD1210011MOSFET 2N-CH 1200V 100A MODULE |
4,879 | - |
|
Технический лист |
- | Module | Bulk | Discontinued at Digi-Key | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 100A (Tc) | 25mOhm @ 100A, 20V | 5V @ 10mA | 500nC @ 20V | 10200pF @ 800V | 900W | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
MSCSM120HM063CAGSIC MOSFET |
5,267 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FS01MR08A8MA2LBCHPSA1MOSFET 6N-CH 750V 620A |
9,699 | - |
|
Технический лист |
HybridPACK™ | Module | Box | Discontinued at Digi-Key | Silicon Carbide (SiC) | 6 N-Channel | Silicon Carbide (SiC) | 750V | 620A (Tj) | 1.69mOhm @ 620A, 18V | 4.55V @ 200mA | 1480nC @ 18V | 43000pF @ 470V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
