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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
QJD1210SA1

QJD1210SA1

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

4,557 -
QJD1210SA1

Технический лист

- Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 520W -40°C ~ 150°C (TJ) - - Chassis Mount Module
QJD1210SB1

QJD1210SB1

SIC 1200V 10A MOD

Powerex Inc.

7,524 -

-

* - Bulk Discontinued at Digi-Key Silicon Carbide (SiC) - - - - - - - - - - - - - -
APTC60TAM21SCTPAG

APTC60TAM21SCTPAG

MOSFET 6N-CH 600V 116A SP6-P

Microchip Technology

5,946 -
APTC60TAM21SCTPAG

Технический лист

CoolMOS™ Module Bulk Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 600V 116A 21mOhm @ 88A, 10V 3.6V @ 6mA 580nC @ 10V 13000pF @ 100V 625W -40°C ~ 150°C (TJ) - - Chassis Mount SP6-P
CCS050M12CM2

CCS050M12CM2

MOSFET 6N-CH 1200V 87A MODULE

Wolfspeed, Inc.

5,161 -

-

Z-FET™ Z-Rec™ Module Bulk Obsolete Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 87A (Tc) 34mOhm @ 50A, 20V 2.3V @ 2.5mA 180nC @ 20V 2810pF @ 800V 337W 150°C (TJ) - - Chassis Mount Module
WAS110M12BM2

WAS110M12BM2

RF MOSFET 1200V

Wolfspeed, Inc.

5,967 -

-

- - Bulk Not For New Designs - - - - - - - - - - - - - - -
QJD1210SA2

QJD1210SA2

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

4,350 -
QJD1210SA2

Технический лист

- Module Bulk Obsolete Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A 17mOhm @ 100A, 15V 1.6V @ 34mA 330nC @ 15V 8200pF @ 10V 415W -40°C ~ 150°C (TJ) - - Chassis Mount Module
APTMC170AM60CT1AG

APTMC170AM60CT1AG

MOSFET 2N-CH 1700V 50A SP1

Microchip Technology

9,853 -
APTMC170AM60CT1AG

Технический лист

- SP1 Bulk Obsolete Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 50A (Tc) 60mOhm @ 50A, 20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V 350W -40°C ~ 150°C (TJ) - - Chassis Mount SP1
MSCSM70HM05CAG

MSCSM70HM05CAG

SIC MOSFET

Microchip Technology

2,214 -

-

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM70TAM10CTPAG

MSCSM70TAM10CTPAG

MOSFET 6N-CH 700V 238A SP6-P

Microchip Technology

3,512 -
MSCSM70TAM10CTPAG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM70AM025CT6AG

MSCSM70AM025CT6AG

MOSFET 700V 538A SP6C

Microchip Technology

8,918 -
MSCSM70AM025CT6AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) - - 700V 538A (Tc) - - - - - - - - Chassis Mount SP6C
MSCSM120TAM16CTPAG

MSCSM120TAM16CTPAG

MOSFET 6N-CH 1200V 171A SP6-P

Microchip Technology

8,055 -
MSCSM120TAM16CTPAG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6-P
MSCSM120HM083CAG

MSCSM120HM083CAG

SIC MOSFET

Microchip Technology

3,522 -

-

- - Bulk Active - - - - - - - - - - - - - - -
MSCSM120AM042CT6AG

MSCSM120AM042CT6AG

MOSFET 2N-CH 1200V 495A SP6C

Microchip Technology

7,444 -
MSCSM120AM042CT6AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70AM025CT6LIAG

MSCSM70AM025CT6LIAG

MOSFET 2N-CH 700V 689A SP6C LI

Microchip Technology

8,656 -
MSCSM70AM025CT6LIAG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N-Channel - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA (Typ) 1290nC @ 20V 27000pF @ 700V 1882W (Tc) - - - Chassis Mount SP6C LI
QJD1210010

QJD1210010

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

2,949 -
QJD1210010

Технический лист

- Module Bulk Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 1080W -40°C ~ 175°C (TJ) - - Chassis Mount Module
WAS300M12BM2

WAS300M12BM2

MOSFET 2N-CH 1200V 423A MODULE

Wolfspeed, Inc.

2,778 -

-

- Module Bulk Not For New Designs Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 423A (Tc) 5.3mOhm @ 300A, 20V 2.5V @ 15mA 1025nC @ 20V 19300pF @ 600V 1.668kW (Tc) 150°C (TJ) - - Chassis Mount Module
MSCSM70HM038CAG

MSCSM70HM038CAG

SIC MOSFET

Microchip Technology

3,042 -

-

- - Bulk Active - - - - - - - - - - - - - - -
QJD1210011

QJD1210011

MOSFET 2N-CH 1200V 100A MODULE

Powerex Inc.

4,879 -
QJD1210011

Технический лист

- Module Bulk Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 100A (Tc) 25mOhm @ 100A, 20V 5V @ 10mA 500nC @ 20V 10200pF @ 800V 900W -40°C ~ 175°C (TJ) - - Chassis Mount Module
MSCSM120HM063CAG

MSCSM120HM063CAG

SIC MOSFET

Microchip Technology

5,267 -

-

- - Bulk Active - - - - - - - - - - - - - - -
FS01MR08A8MA2LBCHPSA1

FS01MR08A8MA2LBCHPSA1

MOSFET 6N-CH 750V 620A

Infineon Technologies

9,699 -
FS01MR08A8MA2LBCHPSA1

Технический лист

HybridPACK™ Module Box Discontinued at Digi-Key Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 750V 620A (Tj) 1.69mOhm @ 620A, 18V 4.55V @ 200mA 1480nC @ 18V 43000pF @ 470V - -40°C ~ 175°C (TJ) - - Chassis Mount -
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