FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
BSS8402DW-7-G

BSS8402DW-7-G

MOSFET N/P-CH 60V/50V SOT363

Diodes Incorporated

4,558 -
BSS8402DW-7-G

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary - 60V, 50V 115mA (Ta), 130mA (Ta) 13.5Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V 2.5V @ 250µA, 2V @ 1mA - 50pF @ 25V, 45pF @ 25V 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
AON5802BG

AON5802BG

MOSFET 2N-CH 30V 10A 6DFN

Alpha & Omega Semiconductor Inc.

2,375 -
AON5802BG

Технический лист

- 6-WFDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 10A (Ta) 18mOhm @ 7A, 4.5V 1.5V @ 250µA 32nC @ 10V 1050pF @ 15V 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN-EP (2x5)
GE12047BCA3

GE12047BCA3

MOSFET 2N-CH 1200V 475A

GE Aerospace

4,201 -
GE12047BCA3

Технический лист

SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount -
GE12047CCA3

GE12047CCA3

MOSFET 2N-CH 1200V 475A MODULE

GE Aerospace

3,881 -
GE12047CCA3

Технический лист

SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount Module
FF45MR12W1M1PB11BPSA1

FF45MR12W1M1PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1BM

Infineon Technologies

4,801 -

-

CoolSiC™ Module Tray Discontinued at Digi-Key Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 25A (Tj) 45mOhm @ 25A, 15V 5.55V @ 10mA 62nC @ 15V 1840pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM
GE17042CCA3

GE17042CCA3

MOSFET 2N-CH 1700V 425A MODULE

GE Aerospace

2,364 -
GE17042CCA3

Технический лист

SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
GE17042BCA3

GE17042BCA3

MOSFET 2N-CH 1700V 425A MODULE

GE Aerospace

3,416 -
GE17042BCA3

Технический лист

SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
EFC2K112NUZTDG

EFC2K112NUZTDG

MOSFET N-CH 12V 32A WLCSP DUAL

onsemi

7,991 -

-

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
FDG6332C-PG

FDG6332C-PG

MOSFET N/P-CH 20V 0.7A SC88

onsemi

3,706 -

-

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 700mA (Ta), 600mA (Ta) 300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V, 2nC @ 4.5V 113pF @ 10V, 114pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
HUFA76413DK8T-F085P

HUFA76413DK8T-F085P

MOSFET 2N-CH 60V 5.1A 8SOIC

onsemi

8,558 -

-

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 5.1A (Tc) 49mOhm @ 5.1A, 10V 3V @ 250µA 23nC @ 10V 620pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
BSZ0907NDXTMA2

BSZ0907NDXTMA2

MOSFET 2N-CH 30V 6.7A WISON-8

Infineon Technologies

5,671 -
BSZ0907NDXTMA2

Технический лист

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 6.7A (Ta), 8.5A (Ta) 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V 2V @ 250µA 6.4nC @ 4.5V, 7.9nC @ 4.5V 730pF @ 15V, 900pF @ 15V 700mW (Ta), 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-WISON-8
BSZ0908NDXTMA2

BSZ0908NDXTMA2

MOSFET 2N-CH 30V 4.8A WISON-8

Infineon Technologies

8,683 -

-

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 4.8A (Ta), 7.6A (Ta) 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V 2V @ 250µA 3nC @ 4.5V, 6.4nC @ 4.5V 340pF @ 15V, 730pF @ 15V 700mW (Ta), 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-WISON-8
FDC6333C-G

FDC6333C-G

MOSFET N/P-CH 30V 2.5A SSOT6

onsemi

8,404 -

-

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 2.5A (Ta), 2A (Ta) 95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V 3V @ 250µA 6.6nC @ 10V, 5.7nC @ 10V 282pF @ 15V, 185pF @ 15V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
CMS07NP03Q8-HF

CMS07NP03Q8-HF

MOSFET N/P-CH 30V 7A 8SOP

Comchip Technology

5,970 -

-

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 7A (Ta), 5.3A (Ta) 28mOhm @ 7A, 10V, 52mOhm @ 5.3A, 10V 2.5V @ 250µA 6nC @ 4.5V, 6.4nC @ 4.5V 572pF @ 15V, 645pF @ 25V 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
CMS02P02T6-HF

CMS02P02T6-HF

MOSFET 2P-CH 20V 2.5A SOT26

Comchip Technology

2,639 -

-

- SOT-23-6 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 2.5A (Tc) 90mOhm @ 2.5A, 4.5V 1V @ 250µA 4.8nC @ 4.5V 350pF @ 15V 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-26
AOCA33104E

AOCA33104E

MOSFET 2N-CH 12V 30A 10DFN

Alpha & Omega Semiconductor Inc.

9,285 -
AOCA33104E

Технический лист

- 10-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 12V 30A (Ta) 2.8mOhm @ 5A, 4.5V 1.2V @ 250µA 36nC @ 4.5V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 10-AlphaDFN (2.98x1.49)
DMN5L06VK-13

DMN5L06VK-13

MOSFET 2N-CH 50V 0.28A SOT563

Diodes Incorporated

4,507 -

-

- SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1.2V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
BSS138DW-7-F-79

BSS138DW-7-F-79

MOSFET 2N-CH 50V 0.2A SOT363

Diodes Incorporated

8,684 -

-

- 6-TSSOP, SC-88, SOT-363 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 200mA (Ta) 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - 50pF @ 10V 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMN5L06VK-7A

DMN5L06VK-7A

MOSFET 2N-CH 50V 0.28A SOT563

Diodes Incorporated

3,897 -

-

- SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1.2V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
DMN5L06VK-13A

DMN5L06VK-13A

MOSFET 2N-CH 50V 0.28A SOT563

Diodes Incorporated

7,434 -

-

- SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 280mA (Ta) 2Ohm @ 50mA, 5V 1.2V @ 250µA - 50pF @ 25V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
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