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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
MCQ11NP04-TP

MCQ11NP04-TP

MOSFET N/P-CH 40V 11A 8SOP

Micro Commercial Co

7,660 -
MCQ11NP04-TP

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 11A (Ta) 32mOhm @ 7A, 10V, 33mOhm @ 7A, 10V 2.5V @ 250µA 11nC @ 10V, 17nC @ 10V 390pF @ 20V, 1080pF @ 20V 2.1W (Tj), 2.3W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
DMC1028UVT-7

DMC1028UVT-7

MOSFET N/P-CH 12V 6.1A TSOT26

Diodes Incorporated

3,106 -
DMC1028UVT-7

Технический лист

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 12V, 20V 6.1A (Ta), 3.5A (Ta) 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V 1V @ 250µA 18.5nC @ 8V, 11.5nC @ 8V 787pF @ 6V, 576pF @ 10V 800mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
STZD3155CT1G

STZD3155CT1G

MOSFET 20V SOT563

onsemi

4,000 -

-

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) - - 20V - - - - - - - - - Surface Mount SOT-563
DMC1229UFDB-13

DMC1229UFDB-13

MOSFET N/P-CH 12V 5.6A 6UDFN

Diodes Incorporated

19,959 -
DMC1229UFDB-13

Технический лист

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 12V 5.6A, 3.8A 29mOhm @ 5A, 4.5V 1V @ 250µA 19.6nC @ 8V 914pF @ 6V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
EFC6605R-V-TR

EFC6605R-V-TR

MOSFET 2N-CH 20V 10A 6EFCP

onsemi

4,960 -
EFC6605R-V-TR

Технический лист

- 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate, 2.5V Drive 20V 10A (Ta) 13.3mOhm @ 3A, 4.5V 1.3V @ 1mA 19.8nC @ 4.5V - 1.6W (Ta) 150°C - - Surface Mount 6-EFCP (1.9x1.46)
PJS6601-AU_S1_000A1

PJS6601-AU_S1_000A1

MOSFET N/P-CH 20V 4.1A SOT23-6

Panjit International Inc.

2,741 -
PJS6601-AU_S1_000A1

Технический лист

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 4.1A (Ta), 3.1A (Ta) 56mOhm @ 4.1A. 4.5V, 115mOhm @ 3.1A, 4.5V 1.2V @ 250µA 4.6nC @ 4.5V, 5.4nC @ 4.5V 350pF @ 10V, 416pF @ 10V 1.25W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-23-6
DMP2065UFDB-13

DMP2065UFDB-13

MOSFET 2P-CH 4.5A 6UDFN

Diodes Incorporated

10,000 -
DMP2065UFDB-13

Технический лист

- 6-UDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - - 4.5A (Ta) 50mOhm @ 2A, 4.5V 1V @ 250µA 9.1nC @ 4.5V 752pF @ 15V - -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2020-6 (Type B)
DMC2053UVTQ-13

DMC2053UVTQ-13

MOSFET N/P-CH 20V 4.6A TSOT26

Diodes Incorporated

9,400 -
DMC2053UVTQ-13

Технический лист

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 4.6A (Ta), 3.2A (Ta) 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V 1V @ 250µA 3.6nC @ 4.5V, 5.9nC @ 4.5V 369pF @ 10V, 440pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TSOT-26
DMN2023UCB4-7

DMN2023UCB4-7

MOSFET 2N-CH 24V 6A X1-WLB1818-4

Diodes Incorporated

3,000 -
DMN2023UCB4-7

Технический лист

- 4-XFBGA, WLBGA Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 24V 6A (Ta) - 1.3V @ 1mA 37nC @ 4.5V 3333pF @ 10V 1.45W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount X1-WLB1818-4
DMN61D8LVT-13

DMN61D8LVT-13

MOSFET 2N-CH 60V 0.63A TSOT26

Diodes Incorporated

2,434 -
DMN61D8LVT-13

Технический лист

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 630mA 1.8Ohm @ 150mA, 5V 2V @ 1mA 0.74nC @ 5V 12.9pF @ 12V 820mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
SSM6L807R,LF

SSM6L807R,LF

MOSFET N/P-CH 30V 4A 6TSOPF

Toshiba Semiconductor and Storage

6,000 -
SSM6L807R,LF

Технический лист

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V, 6.74nC @ 4.5V 310pF @ 15V, 480pF @ 10V 1.4W (Ta) 150°C - - Surface Mount 6-TSOP-F
SSM6L820R,LF

SSM6L820R,LF

MOSFET N/P-CH 30V/20V 4A 6TSOPF

Toshiba Semiconductor and Storage

5,875 -
SSM6L820R,LF

Технический лист

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V, 20V 4A (Ta) 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V 1V @ 1mA, 1.2V @ 1mA 3.2nC @ 4.5V, 6.7nC @ 4.5V 310pF @ 15V, 480pF @ 10V 1.4W (Ta) 150°C - - Surface Mount 6-TSOP-F
DMN2024UTS-13

DMN2024UTS-13

MOSFET 2N-CH 20V 6.2A 8TSSOP

Diodes Incorporated

2,367 -
DMN2024UTS-13

Технический лист

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 6.2A (Ta), 15.2A (Tc) 24mOhm @ 6.5A, 4.5V 950mV @ 250µA 0.9nC @ 10V 647pF @ 10V 890mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
PMDPB55XP,115

PMDPB55XP,115

MOSFET 2P-CH 20V 3.4A 6HUSON

Nexperia USA Inc.

1,403 -
PMDPB55XP,115

Технический лист

- 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 3.4A 70mOhm @ 3.4A, 4.5V 900mV @ 250µA 25nC @ 5V 785pF @ 10V 490mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
EFC2J004NUZTDG

EFC2J004NUZTDG

MOSFET NCH 12V WLCSP6 DUAL

onsemi

10,000 -
EFC2J004NUZTDG

Технический лист

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
DI0A4N45SQ2

DI0A4N45SQ2

MOSFET 2N-CH 450V 0.4A 8SO

Diotec Semiconductor

3,790 -
DI0A4N45SQ2

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 450V 400mA (Ta) 4.5Ohm @ 400mA, 10V 4V @ 250µA 7nC @ 10V 160pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
DMG6968UTS-13

DMG6968UTS-13

MOSFET 2N-CH 20V 5.2A 8TSSOP

Diodes Incorporated

2,299 -
DMG6968UTS-13

Технический лист

- 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 23mOhm @ 6.5A, 4.5V 950mV @ 250µA 8.8nC @ 4.5V 143pF @ 10V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
PJS6603_S2_00001

PJS6603_S2_00001

MOSFET N/P-CH 30V 4.4A SOT23-6

Panjit International Inc.

36,729 -
PJS6603_S2_00001

Технический лист

- SOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 30V 4.4A (Ta), 2.9A (Ta) 48mOhm @ 4.4A, 10V, 110mOhm @ 2.9A, 10V 2.1V @ 250µA 5.8nC @ 10V, 9.8nC @ 10V 235pF @ 15V, 396pF @ 15V 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
DMN2014LHAB-13

DMN2014LHAB-13

MOSFET 2N-CH 20V 9A 6UDFN

Diodes Incorporated

10,000 -
DMN2014LHAB-13

Технический лист

- 6-UFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 9A (Ta) 13mOhm @ 4A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1550pF @ 10V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount U-DFN2030-6 (Type B)
UT6J3TCR

UT6J3TCR

MOSFET 2P-CH 20V 3A HUML2020L8

Rohm Semiconductor

2,900 -
UT6J3TCR

Технический лист

- 6-PowerUDFN Tape & Reel (TR) Active - 2 P-Channel (Dual) - 20V 3A 85mOhm @ 3A, 4.5V 1V @ 1mA 8.5nC @ 4.5V 2000pF @ 10V 2W 150°C (TJ) - - Surface Mount HUML2020L8
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