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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NVMFD5C650NLWFT1GMOSFET 2N-CH 60V 21A 8DFN |
1,500 | - |
|
Технический лист |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 21A (Ta), 111A (Tc) | 4.2mOhm @ 20A, 10V | 2.2V @ 98µA | 16nC @ 4.5V | 2546pF @ 25V | 3.5W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
ALD1106SBLMOSFET 4N-CH 10.6V 14SOIC |
1,005 | - |
|
Технический лист |
- | 14-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 14-SOIC |
|
|
FDMS8090MOSFET 2N-CH 100V 10A 8MLP |
1,042 | - |
|
Технический лист |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 100V | 10A | 13mOhm @ 10A, 10V | 4V @ 250µA | 27nC @ 10V | 1800pF @ 50V | 2.2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP (5x6), Power56 |
|
ALD1106PBLMOSFET 4N-CH 10.6V 14PDIP |
492 | - |
|
Технический лист |
- | 14-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 14-PDIP |
|
EPC2103MOSFET 2N-CH 80V 28A DIE |
5,410 | - |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 80V | 28A | 5.5mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
NXH010P120MNF1PNGMOSFET 2N-CH 1200V 114A |
35 | - |
|
Технический лист |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CAB016M12FM3MOSFET 2N-CH 1200V 78A |
7 | - |
|
Технический лист |
WolfPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 78A | 21.3mOhm @ 80A, 15V | 3.6V @ 23mA | 236nC @ 15V | 6600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
CCB032M12FM3MOSFET 6N-CH 1200V 40A |
43 | - |
|
Технический лист |
WolfPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 40A | 42.6mOhm @ 30A, 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3400pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
CBB021M12FM3TMOSFET 4N-CH 1200V 50A |
32 | - |
|
Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 50A (Tj) | 28.9mOhm @ 30A, 15V | 3.9V @ 17mA | 162nC @ 15V | 5400pF @ 1000V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH003P120M3F2PTHGMOSFET 2N-CH 1200V 350A 36PIM |
83 | - |
|
Технический лист |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 350A (Tc) | 5mOhm @ 200A, 18V | 4.4V @ 160mA | 1195nC @ 20V | 20889pF @ 800V | 979W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
|
CCB021M12FM3MOSFET 6N-CH 1200V 51A |
59 | - |
|
Технический лист |
WolfPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 51A | 27.9mOhm @ 30A, 15V | 3.6V @ 17.7mA | 162nC @ 15V | 4900pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
|
NXH003P120M3F2PTNGMOSFET 2N-CH 1200V 435A 36PIM |
68 | - |
|
Технический лист |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 435A (Tj) | 5mOhm @ 200A, 18V | 4.4V @ 160mA | 1200nC @ 20V | 20889pF @ 800V | 1.48kW (Tj) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | 36-PIM (56.7x62.8) |
|
CAB425M12XM3MOSFET 2N-CH 1200V 450A |
1 | - |
|
Технический лист |
CAB425M12XM3 | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 450A | 4.2mOhm @ 425A, 15V | 3.6V @ 115mA | 1135nC @ 15V | 30.7nF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CAB450M12XM3MOSFET 2N-CH 1200V 450A MODULE |
130 | - |
|
Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 450A | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 1330nC @ 15V | 38000pF @ 800V | 850W | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
|
DMN31D5UDA-7BMOSFET 2N-CH 0.4A 6DFN |
6,641 | - |
|
Технический лист |
- | 6-SMD, No Lead | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | - | 400mA (Ta) | 1.5Ohm @ 100mA, 4.5V | 1V @ 250µA | - | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | X2-DFN0806-6 |
|
2N7002KDW_R1_00001MOSFET 2N-CH 60V 0.115A SOT363 |
24,686 | - |
|
Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 115mA (Ta) | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.8nC @ 4.5V | 35pF @ 25V | 200mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-363 |
|
SSM6N7002CFU,LFMOSFET 2N-CH 60V 0.17A US6 |
26,047 | - |
|
Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 170mA | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 285mW | 150°C (TJ) | - | - | Surface Mount | US6 |
|
PJT138K_R1_00001MOSFET 2N-CH 50V 0.36A SOT363 |
7,195 | - |
|
Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 50V | 360mA (Ta) | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 1nC @ 4.5V | 50pF @ 25V | 236mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-363 |
|
DMN32D0LV-7MOSFET 2N-CH 30V 0.68A SOT563 |
6,921 | - |
|
Технический лист |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 680mA (Ta) | 1.2Ohm @ 100mA, 4V | 1.2V @ 250µA | 0.62nC @ 4.5V | 44.8pF @ 15V | 480mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-563 |
|
BSS138AKDWHE3-TPMOSFET 2N-CH 50V 0.22A SOT363 |
3,966 | - |
|
Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | Logic Level Gate | 50V | 220mA (Tc) | 1.6Ohm @ 500mA, 10V | 1.45V @ 250µA | 1.2nC @ 10V | 29.5pF @ 25V | 320mW (Tj) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-363 |
