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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
NVMFD5C650NLWFT1G

NVMFD5C650NLWFT1G

MOSFET 2N-CH 60V 21A 8DFN

onsemi

1,500 -
NVMFD5C650NLWFT1G

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 21A (Ta), 111A (Tc) 4.2mOhm @ 20A, 10V 2.2V @ 98µA 16nC @ 4.5V 2546pF @ 25V 3.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
ALD1106SBL

ALD1106SBL

MOSFET 4N-CH 10.6V 14SOIC

Advanced Linear Devices Inc.

1,005 -
ALD1106SBL

Технический лист

- 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
FDMS8090

FDMS8090

MOSFET 2N-CH 100V 10A 8MLP

onsemi

1,042 -
FDMS8090

Технический лист

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 100V 10A 13mOhm @ 10A, 10V 4V @ 250µA 27nC @ 10V 1800pF @ 50V 2.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
ALD1106PBL

ALD1106PBL

MOSFET 4N-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

492 -
ALD1106PBL

Технический лист

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
EPC2103

EPC2103

MOSFET 2N-CH 80V 28A DIE

EPC

5,410 -
EPC2103

Технический лист

eGaN® Die Tape & Reel (TR) Active GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 80V 28A 5.5mOhm @ 20A, 5V 2.5V @ 7mA 6.5nC @ 5V 760pF @ 40V - -40°C ~ 150°C (TJ) - - Surface Mount Die
NXH010P120MNF1PNG

NXH010P120MNF1PNG

MOSFET 2N-CH 1200V 114A

onsemi

35 -
NXH010P120MNF1PNG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB016M12FM3

CAB016M12FM3

MOSFET 2N-CH 1200V 78A

Wolfspeed, Inc.

7 -
CAB016M12FM3

Технический лист

WolfPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 78A 21.3mOhm @ 80A, 15V 3.6V @ 23mA 236nC @ 15V 6600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
CCB032M12FM3

CCB032M12FM3

MOSFET 6N-CH 1200V 40A

Wolfspeed, Inc.

43 -
CCB032M12FM3

Технический лист

WolfPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 40A 42.6mOhm @ 30A, 15V 3.6V @ 11.5mA 118nC @ 15V 3400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
CBB021M12FM3T

CBB021M12FM3T

MOSFET 4N-CH 1200V 50A

Wolfspeed, Inc.

32 -
CBB021M12FM3T

Технический лист

- Module Box Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 50A (Tj) 28.9mOhm @ 30A, 15V 3.9V @ 17mA 162nC @ 15V 5400pF @ 1000V - -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH003P120M3F2PTHG

NXH003P120M3F2PTHG

MOSFET 2N-CH 1200V 350A 36PIM

onsemi

83 -
NXH003P120M3F2PTHG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 350A (Tc) 5mOhm @ 200A, 18V 4.4V @ 160mA 1195nC @ 20V 20889pF @ 800V 979W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
CCB021M12FM3

CCB021M12FM3

MOSFET 6N-CH 1200V 51A

Wolfspeed, Inc.

59 -
CCB021M12FM3

Технический лист

WolfPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 51A 27.9mOhm @ 30A, 15V 3.6V @ 17.7mA 162nC @ 15V 4900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH003P120M3F2PTNG

NXH003P120M3F2PTNG

MOSFET 2N-CH 1200V 435A 36PIM

onsemi

68 -
NXH003P120M3F2PTNG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 435A (Tj) 5mOhm @ 200A, 18V 4.4V @ 160mA 1200nC @ 20V 20889pF @ 800V 1.48kW (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
CAB425M12XM3

CAB425M12XM3

MOSFET 2N-CH 1200V 450A

Wolfspeed, Inc.

1 -
CAB425M12XM3

Технический лист

CAB425M12XM3 Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 450A 4.2mOhm @ 425A, 15V 3.6V @ 115mA 1135nC @ 15V 30.7nF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB450M12XM3

CAB450M12XM3

MOSFET 2N-CH 1200V 450A MODULE

Wolfspeed, Inc.

130 -
CAB450M12XM3

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 450A 3.7mOhm @ 450A, 15V 3.6V @ 132mA 1330nC @ 15V 38000pF @ 800V 850W -40°C ~ 175°C (TJ) - - Chassis Mount Module
DMN31D5UDA-7B

DMN31D5UDA-7B

MOSFET 2N-CH 0.4A 6DFN

Diodes Incorporated

6,641 -
DMN31D5UDA-7B

Технический лист

- 6-SMD, No Lead Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - - 400mA (Ta) 1.5Ohm @ 100mA, 4.5V 1V @ 250µA - - - -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN0806-6
2N7002KDW_R1_00001

2N7002KDW_R1_00001

MOSFET 2N-CH 60V 0.115A SOT363

Panjit International Inc.

24,686 -
2N7002KDW_R1_00001

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 115mA (Ta) 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.8nC @ 4.5V 35pF @ 25V 200mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
SSM6N7002CFU,LF

SSM6N7002CFU,LF

MOSFET 2N-CH 60V 0.17A US6

Toshiba Semiconductor and Storage

26,047 -
SSM6N7002CFU,LF

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 170mA 3.9Ohm @ 100mA, 10V 2.1V @ 250µA 0.35nC @ 4.5V 17pF @ 10V 285mW 150°C (TJ) - - Surface Mount US6
PJT138K_R1_00001

PJT138K_R1_00001

MOSFET 2N-CH 50V 0.36A SOT363

Panjit International Inc.

7,195 -
PJT138K_R1_00001

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 50V 360mA (Ta) 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 1nC @ 4.5V 50pF @ 25V 236mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
DMN32D0LV-7

DMN32D0LV-7

MOSFET 2N-CH 30V 0.68A SOT563

Diodes Incorporated

6,921 -
DMN32D0LV-7

Технический лист

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 680mA (Ta) 1.2Ohm @ 100mA, 4V 1.2V @ 250µA 0.62nC @ 4.5V 44.8pF @ 15V 480mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
BSS138AKDWHE3-TP

BSS138AKDWHE3-TP

MOSFET 2N-CH 50V 0.22A SOT363

Micro Commercial Co

3,966 -
BSS138AKDWHE3-TP

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 50V 220mA (Tc) 1.6Ohm @ 500mA, 10V 1.45V @ 250µA 1.2nC @ 10V 29.5pF @ 25V 320mW (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-363
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