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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UT6K30TCRMOSFET 2N-CH 60V 3A HUML2020L8 |
6,063 | - |
|
Технический лист |
- | 6-PowerUDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 3A (Ta) | 153mOhm @ 3A, 10V | 2.7V @ 50µA | 2.1nC @ 10V | 110pF @ 30V | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | HUML2020L8 |
|
SIZ250DT-T1-GE3MOSFET 2N-CH 60V 14A 8POWERPAIR |
2,813 | - |
|
Технический лист |
TrenchFET® Gen IV | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 14A (Ta), 38A (Tc) | 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V | 2.4V @ 250µA | 21nC @ 10V | 840pF @ 30V, 790pF @ 30V | 4.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PowerPair® (3.3x3.3) |
|
SI4931DY-T1-GE3MOSFET 2P-CH 12V 6.7A 8SOIC |
11,587 | - |
|
Технический лист |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 12V | 6.7A | 18mOhm @ 8.9A, 4.5V | 1V @ 350µA | 52nC @ 4.5V | - | 1.1W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRF9358TRPBFMOSFET 2P-CH 30V 9.2A 8SO |
4,873 | - |
|
Технический лист |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 9.2A | 16.3mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1740pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
AONY36352MOSFET 2N-CH 30V 18.5A 8DFN |
14,310 | - |
|
Технический лист |
- | 8-PowerSMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | - | 30V | 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) | 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V | 2.1V @ 250µA, 1.9V @ 250µA | 20nC @ 10V, 52nC @ 10V | 820pF @ 15V, 2555pF @ 15V | 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (5x6) |
|
IRF7342TRPBFMOSFET 2P-CH 55V 3.4A 8SO |
9,036 | - |
|
Технический лист |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
TC6320TG-GMOSFET N/P-CH 200V 8SOIC |
3,664 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 200V | - | 7Ohm @ 1A, 10V | 2V @ 1mA | - | 110pF @ 25V, 125pF @ 25V | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
CSD88537NDMOSFET 2N-CH 60V 15A 8SOIC |
4,931 | - |
|
Технический лист |
NexFET™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 15A | 15mOhm @ 8A, 10V | 3.6V @ 250µA | 18nC @ 10V | 1400pF @ 30V | 2.1W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDMB3800NMOSFET 2N-CH 30V 8MLP MICROFET |
4,430 | - |
|
Технический лист |
PowerTrench® | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.8A | 40mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | 750mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x1.9) |
|
SI6913DQ-T1-GE3MOSFET 2P-CH 12V 4.9A 8TSSOP |
15,688 | - |
|
Технический лист |
TrenchFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 12V | 4.9A | 21mOhm @ 5.8A, 4.5V | 900mV @ 400µA | 28nC @ 4.5V | - | 830mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
|
TD9944TG-GMOSFET 2N-CH 240V 8SOIC |
12,021 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 240V | - | 6Ohm @ 500mA, 10V | 2V @ 1mA | - | 125pF @ 25V | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FDMA1024NZMOSFET 2N-CH 20V 5A 6MICROFET |
5,242 | - |
|
Технический лист |
PowerTrench® | 6-VDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 54mOhm @ 5A, 4.5V | 1V @ 250µA | 7.3nC @ 4.5V | 500pF @ 10V | 700mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
|
IPG20N10S436AATMA1MOSFET 2N-CH 100V 20A 8TDSON |
66,308 | - |
|
Технический лист |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 20A | 36mOhm @ 17A, 10V | 3.5V @ 16µA | 15nC @ 10V | 990pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
|
SI4564DY-T1-GE3MOSFET N/P-CH 40V 10A/9.2A 8SOIC |
10,050 | - |
|
Технический лист |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | Logic Level Gate | 40V | 10A, 9.2A | 17.5mOhm @ 8A, 10V | 2V @ 250µA | 31nC @ 10V | 855pF @ 20V | 3.1W, 3.2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
TC2320TG-GMOSFET N/P-CH 200V 8SOIC |
6,226 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 200V | - | 7Ohm @ 1A, 10V | 2V @ 1mA | - | 110pF @ 25V, 125pF @ 25V | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI4288DY-T1-GE3MOSFET 2N-CH 40V 9.2A 8SOIC |
5,672 | - |
|
Технический лист |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 40V | 9.2A | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 15nC @ 10V | 580pF @ 20V | 3.1W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI7272DP-T1-GE3MOSFET 2N-CH 30V 25A PPAK SO8 |
21,236 | - |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 25A | 9.3mOhm @ 15A, 10V | 2.5V @ 250µA | 26nC @ 10V | 1100pF @ 15V | 22W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
|
SQJ560EP-T1_GE3MOSFET N/P-CH 60V 30A PPAK SO8 |
15,006 | - |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 60V | 30A (Tc), 18A (Tc) | 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V | 2.5V @ 250µA | 30nC @ 10V, 45nC @ 10V | 1650pF @ 25V | 34W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® SO-8 Dual |
|
FDS89161LZMOSFET 2N-CH 100V 2.7A 8SOIC |
3,193 | - |
|
Технический лист |
PowerTrench® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 2.7A | 105mOhm @ 2.7A, 10V | 2.2V @ 250µA | 5.3nC @ 10V | 302pF @ 50V | 1.6W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
SI7288DP-T1-GE3MOSFET 2N-CH 40V 20A PPAK SO8 |
97,789 | - |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 20A | 19mOhm @ 10A, 10V | 2.8V @ 250µA | 15nC @ 10V | 565pF @ 20V | 15.6W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
