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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
UT6K30TCR

UT6K30TCR

MOSFET 2N-CH 60V 3A HUML2020L8

Rohm Semiconductor

6,063 -
UT6K30TCR

Технический лист

- 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3A (Ta) 153mOhm @ 3A, 10V 2.7V @ 50µA 2.1nC @ 10V 110pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
SIZ250DT-T1-GE3

SIZ250DT-T1-GE3

MOSFET 2N-CH 60V 14A 8POWERPAIR

Vishay Siliconix

2,813 -
SIZ250DT-T1-GE3

Технический лист

TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 14A (Ta), 38A (Tc) 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V 2.4V @ 250µA 21nC @ 10V 840pF @ 30V, 790pF @ 30V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
SI4931DY-T1-GE3

SI4931DY-T1-GE3

MOSFET 2P-CH 12V 6.7A 8SOIC

Vishay Siliconix

11,587 -
SI4931DY-T1-GE3

Технический лист

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 6.7A 18mOhm @ 8.9A, 4.5V 1V @ 350µA 52nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRF9358TRPBF

IRF9358TRPBF

MOSFET 2P-CH 30V 9.2A 8SO

Infineon Technologies

4,873 -
IRF9358TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 9.2A 16.3mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
AONY36352

AONY36352

MOSFET 2N-CH 30V 18.5A 8DFN

Alpha & Omega Semiconductor Inc.

14,310 -
AONY36352

Технический лист

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V 2.1V @ 250µA, 1.9V @ 250µA 20nC @ 10V, 52nC @ 10V 820pF @ 15V, 2555pF @ 15V 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
IRF7342TRPBF

IRF7342TRPBF

MOSFET 2P-CH 55V 3.4A 8SO

Infineon Technologies

9,036 -
IRF7342TRPBF

Технический лист

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 55V 3.4A 105mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
TC6320TG-G

TC6320TG-G

MOSFET N/P-CH 200V 8SOIC

Microchip Technology

3,664 -
TC6320TG-G

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 200V - 7Ohm @ 1A, 10V 2V @ 1mA - 110pF @ 25V, 125pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
CSD88537ND

CSD88537ND

MOSFET 2N-CH 60V 15A 8SOIC

Texas Instruments

4,931 -
CSD88537ND

Технический лист

NexFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 15mOhm @ 8A, 10V 3.6V @ 250µA 18nC @ 10V 1400pF @ 30V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDMB3800N

FDMB3800N

MOSFET 2N-CH 30V 8MLP MICROFET

onsemi

4,430 -
FDMB3800N

Технический лист

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.8A 40mOhm @ 4.8A, 10V 3V @ 250µA 5.6nC @ 5V 465pF @ 15V 750mW -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP, MicroFET (3x1.9)
SI6913DQ-T1-GE3

SI6913DQ-T1-GE3

MOSFET 2P-CH 12V 4.9A 8TSSOP

Vishay Siliconix

15,688 -
SI6913DQ-T1-GE3

Технический лист

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.9A 21mOhm @ 5.8A, 4.5V 900mV @ 400µA 28nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
TD9944TG-G

TD9944TG-G

MOSFET 2N-CH 240V 8SOIC

Microchip Technology

12,021 -
TD9944TG-G

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 240V - 6Ohm @ 500mA, 10V 2V @ 1mA - 125pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDMA1024NZ

FDMA1024NZ

MOSFET 2N-CH 20V 5A 6MICROFET

onsemi

5,242 -
FDMA1024NZ

Технический лист

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5A 54mOhm @ 5A, 4.5V 1V @ 250µA 7.3nC @ 4.5V 500pF @ 10V 700mW -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
IPG20N10S436AATMA1

IPG20N10S436AATMA1

MOSFET 2N-CH 100V 20A 8TDSON

Infineon Technologies

66,308 -
IPG20N10S436AATMA1

Технический лист

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 20A 36mOhm @ 17A, 10V 3.5V @ 16µA 15nC @ 10V 990pF @ 25V 43W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
SI4564DY-T1-GE3

SI4564DY-T1-GE3

MOSFET N/P-CH 40V 10A/9.2A 8SOIC

Vishay Siliconix

10,050 -
SI4564DY-T1-GE3

Технический лист

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 40V 10A, 9.2A 17.5mOhm @ 8A, 10V 2V @ 250µA 31nC @ 10V 855pF @ 20V 3.1W, 3.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
TC2320TG-G

TC2320TG-G

MOSFET N/P-CH 200V 8SOIC

Microchip Technology

6,226 -
TC2320TG-G

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 200V - 7Ohm @ 1A, 10V 2V @ 1mA - 110pF @ 25V, 125pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI4288DY-T1-GE3

SI4288DY-T1-GE3

MOSFET 2N-CH 40V 9.2A 8SOIC

Vishay Siliconix

5,672 -
SI4288DY-T1-GE3

Технический лист

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 9.2A 20mOhm @ 10A, 10V 2.5V @ 250µA 15nC @ 10V 580pF @ 20V 3.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI7272DP-T1-GE3

SI7272DP-T1-GE3

MOSFET 2N-CH 30V 25A PPAK SO8

Vishay Siliconix

21,236 -
SI7272DP-T1-GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 25A 9.3mOhm @ 15A, 10V 2.5V @ 250µA 26nC @ 10V 1100pF @ 15V 22W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
SQJ560EP-T1_GE3

SQJ560EP-T1_GE3

MOSFET N/P-CH 60V 30A PPAK SO8

Vishay Siliconix

15,006 -
SQJ560EP-T1_GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 30A (Tc), 18A (Tc) 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V 2.5V @ 250µA 30nC @ 10V, 45nC @ 10V 1650pF @ 25V 34W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8 Dual
FDS89161LZ

FDS89161LZ

MOSFET 2N-CH 100V 2.7A 8SOIC

onsemi

3,193 -
FDS89161LZ

Технический лист

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 2.7A 105mOhm @ 2.7A, 10V 2.2V @ 250µA 5.3nC @ 10V 302pF @ 50V 1.6W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
SI7288DP-T1-GE3

SI7288DP-T1-GE3

MOSFET 2N-CH 40V 20A PPAK SO8

Vishay Siliconix

97,789 -
SI7288DP-T1-GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 20A 19mOhm @ 10A, 10V 2.8V @ 250µA 15nC @ 10V 565pF @ 20V 15.6W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
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