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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
FF2600UXTR33T2M1BPSA1

FF2600UXTR33T2M1BPSA1

MOSFET 2N-CH 3300V AG-XHP2K33

Infineon Technologies

8,488 -
FF2600UXTR33T2M1BPSA1

Технический лист

CoolSiC™ Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 3300V (3.3kV) 720A (Tc) 3.1mOhm @ 750A, 15V 5.55V @ 675mA 3750nC @ 15V 152000pF @ 1.8kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-XHP2K33
SSM6N68NU,LF

SSM6N68NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

16 -
SSM6N68NU,LF

Технический лист

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.8V Drive 30V 4A (Ta) 84mOhm @ 2A, 4.5V 1V @ 1mA 1.8nC @ 4.5V 129pF @ 15V 2W (Ta) 150°C - - Surface Mount 6-µDFN (2x2)
DMN2016LFG-7

DMN2016LFG-7

MOSFET 2N-CH 20V 5.2A 8DFN

Diodes Incorporated

5,306 -
DMN2016LFG-7

Технический лист

- 8-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 5.2A 18mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V 770mW -55°C ~ 150°C (TJ) - - Surface Mount U-DFN3030-8
ZXMN3A06DN8TA

ZXMN3A06DN8TA

MOSFET 2N-CH 30V 4.9A 8SO

Diodes Incorporated

13 -
ZXMN3A06DN8TA

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 35mOhm @ 9A, 10V 1V @ 250µA (Min) 17.5nC @ 10V 796pF @ 25V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BUK9V13-40HX

BUK9V13-40HX

MOSFET 2N-CH 40V 42A LFPAK56D

Nexperia USA Inc.

6 -
BUK9V13-40HX

Технический лист

TrenchMOS™ SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate 40V 42A (Ta) 13.6mOhm @ 10A, 10V 2.2V @ 1mA 19.4nC @ 10V 1160pF @ 25V 46W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
STS1DNC45

STS1DNC45

MOSFET 2N-CH 450V 0.4A 8SOIC

STMicroelectronics

7,067 -
STS1DNC45

Технический лист

SuperMESH™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 450V 400mA 4.5Ohm @ 500mA, 10V 3.7V @ 250µA 10nC @ 10V 160pF @ 25V 1.6W 150°C (TJ) - - Surface Mount 8-SOIC
ALD110900SAL

ALD110900SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

9,418 -
ALD110900SAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1116PAL

ALD1116PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,888 -
ALD1116PAL

Технический лист

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1117PAL

ALD1117PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

9,185 -
ALD1117PAL

Технический лист

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102SAL

ALD1102SAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

12 -
ALD1102SAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD210800SCL

ALD210800SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

19 -
ALD210800SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1102PAL

ALD1102PAL

MOSFET 2P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

22 -
ALD1102PAL

Технический лист

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110800ASCL

ALD110800ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

23 -
ALD110800ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD1101ASAL

ALD1101ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,264 -
ALD1101ASAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110800APCL

ALD110800APCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

4 -
ALD110800APCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
FMM150-0075X2F

FMM150-0075X2F

MOSFET 2N-CH 75V 120A I4-PAC

IXYS

7,765 -

-

HiPerFET™, TrenchT2™ ISOPLUSi5-PAK™ Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 75V 120A 5.8mOhm @ 100A, 10V 4V @ 250µA 178nC @ 10V 10500pF @ 25V 170W -55°C ~ 175°C (TJ) - - Through Hole ISOPLUS i4-PAC™
MSCSM120AM50CT1AG

MSCSM120AM50CT1AG

MOSFET 2N-CH 1200V 55A SP1F

Microchip Technology

8,032 -
MSCSM120AM50CT1AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
MSCSM70AM10CT3AG

MSCSM70AM10CT3AG

MOSFET 2N-CH 700V 241A SP3F

Microchip Technology

6,864 -
MSCSM70AM10CT3AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170AM23CT1AG

MSCSM170AM23CT1AG

MOSFET 2N-CH 1700V 124A

Microchip Technology

8,228 -
MSCSM170AM23CT1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM11CT3AG

MSCSM170AM11CT3AG

MOSFET 2N-CH 1700V 240A

Microchip Technology

2,547 -
MSCSM170AM11CT3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.14kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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