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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF2600UXTR33T2M1BPSA1MOSFET 2N-CH 3300V AG-XHP2K33 |
8,488 | - |
|
Технический лист |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 3300V (3.3kV) | 720A (Tc) | 3.1mOhm @ 750A, 15V | 5.55V @ 675mA | 3750nC @ 15V | 152000pF @ 1.8kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-XHP2K33 |
|
SSM6N68NU,LFMOSFET 2N-CH 30V 4A 6DFN |
16 | - |
|
Технический лист |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | 2W (Ta) | 150°C | - | - | Surface Mount | 6-µDFN (2x2) |
|
DMN2016LFG-7MOSFET 2N-CH 20V 5.2A 8DFN |
5,306 | - |
|
Технический лист |
- | 8-PowerUDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 5.2A | 18mOhm @ 6A, 4.5V | 1.1V @ 250µA | 16nC @ 4.5V | 1472pF @ 10V | 770mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | U-DFN3030-8 |
|
ZXMN3A06DN8TAMOSFET 2N-CH 30V 4.9A 8SO |
13 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 35mOhm @ 9A, 10V | 1V @ 250µA (Min) | 17.5nC @ 10V | 796pF @ 25V | 1.8W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
BUK9V13-40HXMOSFET 2N-CH 40V 42A LFPAK56D |
6 | - |
|
Технический лист |
TrenchMOS™ | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 42A (Ta) | 13.6mOhm @ 10A, 10V | 2.2V @ 1mA | 19.4nC @ 10V | 1160pF @ 25V | 46W (Ta) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK56D |
|
STS1DNC45MOSFET 2N-CH 450V 0.4A 8SOIC |
7,067 | - |
|
Технический лист |
SuperMESH™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 450V | 400mA | 4.5Ohm @ 500mA, 10V | 3.7V @ 250µA | 10nC @ 10V | 160pF @ 25V | 1.6W | 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110900SALMOSFET 2N-CH 10.6V 8SOIC |
9,418 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD1116PALMOSFET 2N-CH 10.6V 8PDIP |
7,888 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1117PALMOSFET 2P-CH 10.6V 8PDIP |
9,185 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 1800Ohm @ 5V | 1.2V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102SALMOSFET 2P-CH 10.6V 8SOIC |
12 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD210800SCLMOSFET 4N-CH 10.6V 0.08A 16SOIC |
19 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD1102PALMOSFET 2P-CH 10.6V 8PDIP |
22 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD110800ASCLMOSFET 4N-CH 10.6V 16SOIC |
23 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD1101ASALMOSFET 2N-CH 10.6V 8SOIC |
4,264 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16PDIP |
4 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
FMM150-0075X2FMOSFET 2N-CH 75V 120A I4-PAC |
7,765 | - |
|
- |
HiPerFET™, TrenchT2™ | ISOPLUSi5-PAK™ | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | - | 75V | 120A | 5.8mOhm @ 100A, 10V | 4V @ 250µA | 178nC @ 10V | 10500pF @ 25V | 170W | -55°C ~ 175°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
|
MSCSM120AM50CT1AGMOSFET 2N-CH 1200V 55A SP1F |
8,032 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1200V (1.2kV) | 55A (Tc) | 50mOhm @ 40A, 20V | 2.7V @ 1mA | 137nC @ 20V | 1990pF @ 1000V | 245W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP1F |
|
MSCSM70AM10CT3AGMOSFET 2N-CH 700V 241A SP3F |
6,864 | - |
|
Технический лист |
- | Module | Tube | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
|
MSCSM170AM23CT1AGMOSFET 2N-CH 1700V 124A |
8,228 | - |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 124A (Tc) | 22.5mOhm @ 60A, 20V | 3.2V @ 5mA | 356nC @ 20V | 6600pF @ 1000V | 602W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
MSCSM170AM11CT3AGMOSFET 2N-CH 1700V 240A |
2,547 | - |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 240A (Tc) | 11.3mOhm @ 120A, 20V | 3.2V @ 10mA | 712nC @ 20V | 13200pF @ 1000V | 1.14kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
