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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
IPG20N04S4L07AATMA1

IPG20N04S4L07AATMA1

MOSFET 2N-CH 40V 20A 8TDSON

Infineon Technologies

5,928 -
IPG20N04S4L07AATMA1

Технический лист

OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 7.2mOhm @ 17A, 10V 2.2V @ 30µA 50nC @ 10V 3980pF @ 25V 65W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PG-TDSON-8-10
SISF20DN-T1-GE3

SISF20DN-T1-GE3

MOSFET 2N-CH 60V 14A PWRPAK1212

Vishay Siliconix

7,886 -
SISF20DN-T1-GE3

Технический лист

TrenchFET® Gen IV PowerPAK® 1212-8SCD Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 14A (Ta), 52A (Tc) 13mOhm @ 7A, 10V 3V @ 250µA 33nC @ 10V 1290pF @ 30V 5.2W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SCD Dual
SI7949DP-T1-GE3

SI7949DP-T1-GE3

MOSFET 2P-CH 60V 3.2A PPAK SO8

Vishay Siliconix

3,646 -
SI7949DP-T1-GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 3.2A 64mOhm @ 5A, 10V 3V @ 250µA 40nC @ 10V - 1.5W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
NVMJD015N06CLTWG

NVMJD015N06CLTWG

MOSFET 2N-CH 60V 10.1A 8LFPAK

onsemi

8,574 -
NVMJD015N06CLTWG

Технический лист

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 10.1A (Ta), 35A (Tc) 14.4mOhm @ 17A, 10V 2.2V @ 25µA 9.4nC @ 10V 643pF @ 30V 3.1W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMJD7D4N04CLTWG

NVMJD7D4N04CLTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,933 -
NVMJD7D4N04CLTWG

Технический лист

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
NVMJD012N06CLTWG

NVMJD012N06CLTWG

MOSFET 2N-CH 60V 11.5A 8LFPAK

onsemi

9,941 -
NVMJD012N06CLTWG

Технический лист

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 11.5A (Ta), 42A (Tc) 11.9mOhm @ 25A, 10V 2.2V @ 30µA 11.5nC @ 10V 792pF @ 25V 3.2W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVMFD5C470NT1G

NVMFD5C470NT1G

MOSFET 2N-CH 40V 11.7A 8DFN

onsemi

5,906 -
NVMFD5C470NT1G

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 11.7A (Ta), 36A (Tc) 11.7mOhm @ 10A, 10V 3.5V @ 250µA 8nC @ 10V 420pF @ 25V 3.1W (Ta), 28W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
NVMJD5D4N04CTWG

NVMJD5D4N04CTWG

MOSFET N-CH 40V LFPAK56

onsemi

5,708 -
NVMJD5D4N04CTWG

Технический лист

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - -
SP8J5FRATB

SP8J5FRATB

MOSFET 2P-CH 7A 8SOP

Rohm Semiconductor

8,823 -
SP8J5FRATB

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate, 4V Drive - 7A (Ta) 28mOhm @ 7A, 10V 2.5V @ 1mA - - - 150°C Automotive AEC-Q101 Surface Mount 8-SOP
HP8M31TB1

HP8M31TB1

MOSFET N/P-CH 60V 8.5A 8HSOP

Rohm Semiconductor

1 -
HP8M31TB1

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 8.5A (Ta) 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V 3V @ 1mA 12.3nC @ 10V, 38nC @ 10V 470pF @ 30V, 2300pF @ 30V 3W (Ta) 150°C (TJ) - - Surface Mount 8-HSOP
NVMFD5C462NLT1G

NVMFD5C462NLT1G

MOSFET 2N-CH 40V 18A 8DFN

onsemi

8,993 -
NVMFD5C462NLT1G

Технический лист

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 18A (Ta), 84A (Tc) 4.7mOhm @ 10A, 10V 2.2V @ 40µA 11nC @ 4.5V 1300pF @ 25V 3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
SLA5073

SLA5073

MOSFET 6N-CH 60V 5A 15ZIP

Sanken Electric USA Inc.

8,497 -
SLA5073

Технический лист

- 15-SIP Exposed Tab, Formed Leads Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) Logic Level Gate 60V 5A 300mOhm @ 3A, 4V 2V @ 250µA - 320pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
CSD86356Q5DT

CSD86356Q5DT

MOSFET 2N-CH 25V 40A 8VSON-CLIP

Texas Instruments

5,505 -
CSD86356Q5DT

Технический лист

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) Logic Level Gate, 5V Drive 25V 40A (Ta) 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V 1.85V @ 250µA, 1.5V @ 250µA 7.9nC @ 4.5V, 19.3nC @ 4.5V 1040pF @ 12.5V, 2510pF @ 12.5V 12W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-VSON-CLIP (5x6)
ALD110908ASAL

ALD110908ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

8,037 -
ALD110908ASAL

Технический лист

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110900ASAL

ALD110900ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

5,668 -
ALD110900ASAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 10mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1101SAL

ALD1101SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

2,230 -
ALD1101SAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD114835SCL

ALD114835SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

8,147 -
ALD114835SCL

Технический лист

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
SQUN702E-T1_GE3

SQUN702E-T1_GE3

MOSFET N/P-CH 40V/200V 30A DIE

Vishay Siliconix

8,047 -
SQUN702E-T1_GE3

Технический лист

TrenchFET® Die Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel, Common Drain - 40V, 200V 30A (Tc), 20A (Tc) 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V 2.5V @ 250µA, 3.5V @ 250µA 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V 48W (Tc), 60W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank Die
ALD212900APAL

ALD212900APAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

5,792 -
ALD212900APAL

Технический лист

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1102ASAL

ALD1102ASAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

2,822 -
ALD1102ASAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
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