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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPG20N04S4L07AATMA1MOSFET 2N-CH 40V 20A 8TDSON |
5,928 | - |
|
Технический лист |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
|
SISF20DN-T1-GE3MOSFET 2N-CH 60V 14A PWRPAK1212 |
7,886 | - |
|
Технический лист |
TrenchFET® Gen IV | PowerPAK® 1212-8SCD Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 14A (Ta), 52A (Tc) | 13mOhm @ 7A, 10V | 3V @ 250µA | 33nC @ 10V | 1290pF @ 30V | 5.2W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8SCD Dual |
|
SI7949DP-T1-GE3MOSFET 2P-CH 60V 3.2A PPAK SO8 |
3,646 | - |
|
Технический лист |
TrenchFET® | PowerPAK® SO-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 1.5W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 Dual |
|
NVMJD015N06CLTWGMOSFET 2N-CH 60V 10.1A 8LFPAK |
8,574 | - |
|
Технический лист |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | - | 2 N-Channel (Dual) | - | 60V | 10.1A (Ta), 35A (Tc) | 14.4mOhm @ 17A, 10V | 2.2V @ 25µA | 9.4nC @ 10V | 643pF @ 30V | 3.1W (Ta), 37W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
NVMJD7D4N04CLTWGMOSFET N-CH 40V LFPAK56 |
5,933 | - |
|
Технический лист |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NVMJD012N06CLTWGMOSFET 2N-CH 60V 11.5A 8LFPAK |
9,941 | - |
|
Технический лист |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 11.5A (Ta), 42A (Tc) | 11.9mOhm @ 25A, 10V | 2.2V @ 30µA | 11.5nC @ 10V | 792pF @ 25V | 3.2W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-LFPAK |
|
NVMFD5C470NT1GMOSFET 2N-CH 40V 11.7A 8DFN |
5,906 | - |
|
Технический лист |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 11.7A (Ta), 36A (Tc) | 11.7mOhm @ 10A, 10V | 3.5V @ 250µA | 8nC @ 10V | 420pF @ 25V | 3.1W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
NVMJD5D4N04CTWGMOSFET N-CH 40V LFPAK56 |
5,708 | - |
|
Технический лист |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SP8J5FRATBMOSFET 2P-CH 7A 8SOP |
8,823 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate, 4V Drive | - | 7A (Ta) | 28mOhm @ 7A, 10V | 2.5V @ 1mA | - | - | - | 150°C | Automotive | AEC-Q101 | Surface Mount | 8-SOP |
|
HP8M31TB1MOSFET N/P-CH 60V 8.5A 8HSOP |
1 | - |
|
Технический лист |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 60V | 8.5A (Ta) | 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V | 3V @ 1mA | 12.3nC @ 10V, 38nC @ 10V | 470pF @ 30V, 2300pF @ 30V | 3W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSOP |
|
NVMFD5C462NLT1GMOSFET 2N-CH 40V 18A 8DFN |
8,993 | - |
|
Технический лист |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 18A (Ta), 84A (Tc) | 4.7mOhm @ 10A, 10V | 2.2V @ 40µA | 11nC @ 4.5V | 1300pF @ 25V | 3W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
SLA5073MOSFET 6N-CH 60V 5A 15ZIP |
8,497 | - |
|
Технический лист |
- | 15-SIP Exposed Tab, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 5A | 300mOhm @ 3A, 4V | 2V @ 250µA | - | 320pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 15-ZIP |
|
CSD86356Q5DTMOSFET 2N-CH 25V 40A 8VSON-CLIP |
5,505 | - |
|
Технический лист |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate, 5V Drive | 25V | 40A (Ta) | 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V | 1.85V @ 250µA, 1.5V @ 250µA | 7.9nC @ 4.5V, 19.3nC @ 4.5V | 1040pF @ 12.5V, 2510pF @ 12.5V | 12W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
|
ALD110908ASALMOSFET 2N-CH 10.6V 8SOIC |
8,037 | - |
|
Технический лист |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD110900ASALMOSFET 2N-CH 10.6V 8SOIC |
5,668 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD1101SALMOSFET 2N-CH 10.6V 8SOIC |
2,230 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
ALD114835SCLMOSFET 4N-CH 10.6V 16SOIC |
8,147 | - |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
SQUN702E-T1_GE3MOSFET N/P-CH 40V/200V 30A DIE |
8,047 | - |
|
Технический лист |
TrenchFET® | Die | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel, Common Drain | - | 40V, 200V | 30A (Tc), 20A (Tc) | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250µA, 3.5V @ 250µA | 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V | 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V | 48W (Tc), 60W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | Die |
|
ALD212900APALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
5,792 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 10mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102ASALMOSFET 2P-CH 10.6V 8SOIC |
2,822 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
