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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
MSCSM120DDUM31CTBL2NG

MSCSM120DDUM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

6,453 -
MSCSM120DDUM31CTBL2NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM31T3AG

MSCSM120TAM31T3AG

MOSFET 6N-CH 1200V 89A

Microchip Technology

7,863 -
MSCSM120TAM31T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM11T3AG

MSCSM120AM11T3AG

MOSFET 2N-CH 1200V 254A

Microchip Technology

9,957 -
MSCSM120AM11T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM180D12P2C101

BSM180D12P2C101

MOSFET 2N-CH 1200V 204A MODULE

Rohm Semiconductor

1 -
BSM180D12P2C101

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 23000pF @ 10V 1130W -40°C ~ 150°C (TJ) - - - Module
MSCSM120HM16T3AG

MSCSM120HM16T3AG

MOSFET 4N-CH 1200V 173A

Microchip Technology

8,197 -
MSCSM120HM16T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM08T3AG

MSCSM120AM08T3AG

MOSFET 2N-CH 1200V 337A

Microchip Technology

9,113 -
MSCSM120AM08T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 12mA 928nC @ 20V 12100pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M07CT6AG

MSCSM70VR1M07CT6AG

MOSFET 2N-CH 700V 349A

Microchip Technology

2,976 -
MSCSM70VR1M07CT6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M11CT6AG

MSCSM120VR1M11CT6AG

MOSFET 2N-CH 1200V 251A

Microchip Technology

9,541 -
MSCSM120VR1M11CT6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70TAM10TPAG

MSCSM70TAM10TPAG

MOSFET 6N-CH 700V 238A

Microchip Technology

4,778 -
MSCSM70TAM10TPAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025T6AG

MSCSM70AM025T6AG

MOSFET 2N-CH 700V 689A

Microchip Technology

9,269 -
MSCSM70AM025T6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70HM05AG

MSCSM70HM05AG

MOSFET 4N-CH 700V 349A

Microchip Technology

6,010 -
MSCSM70HM05AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025D3AG

MSCSM70AM025D3AG

MOSFET 2N-CH 700V 689A

Microchip Technology

8,245 -
MSCSM70AM025D3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TAM16TPAG

MSCSM120TAM16TPAG

MOSFET 6N-CH 1200V 171A

Microchip Technology

5,194 -
MSCSM120TAM16TPAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1200V (1.2kV) 171A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 728W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM083AG

MSCSM120HM083AG

MOSFET 4N-CH 1200V 251A

Microchip Technology

7,235 -
MSCSM120HM083AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 9mA 696nC @ 20V 9000pF @ 1000V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM025T6LIAG

MSCSM70AM025T6LIAG

MOSFET 2N-CH 700V 689A

Microchip Technology

2,593 -
MSCSM70AM025T6LIAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1.882kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M03CT6AG

MSCSM70VR1M03CT6AG

MOSFET 2N-CH 700V 585A

Microchip Technology

5,261 -
MSCSM70VR1M03CT6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 585A (Tc) 3.8mOhm @ 200A, 20V 2.4V @ 20mA 1075nC @ 20V 22500pF @ 700V 1.625kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042D3AG

MSCSM120AM042D3AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,526 -
MSCSM120AM042D3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042T6LIAG

MSCSM120AM042T6LIAG

MOSFET 2N-CH 1200V 495A

Microchip Technology

8,847 -
MSCSM120AM042T6LIAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70HM038AG

MSCSM70HM038AG

MOSFET 4N-CH 700V 464A

Microchip Technology

8,657 -
MSCSM70HM038AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1.277kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M062CT6AG

MSCSM120VR1M062CT6AG

MOSFET 2N-CH 1200V 420A

Microchip Technology

6,745 -
MSCSM120VR1M062CT6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 420A (Tc) 6.2mOhm @ 200A, 20V 2.8V @ 15mA 1160nC @ 20V 15100pF @ 1000V 1.753kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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