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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
ALD110814SCL

ALD110814SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

4 -
ALD110814SCL

Технический лист

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD110900PAL

ALD110900PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

2,732 -
ALD110900PAL

Технический лист

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD210800ASCL

ALD210800ASCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

3,194 -
ALD210800ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 10mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
MSCSM120AM31T1AG

MSCSM120AM31T1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

5,778 -
MSCSM120AM31T1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70VR1M19C1AG

MSCSM70VR1M19C1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

9,305 -
MSCSM70VR1M19C1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31TBL1NG

MSCSM120DUM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,193 -
MSCSM120DUM31TBL1NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31TBL1NG

MSCSM120AM31TBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

2,052 -
MSCSM120AM31TBL1NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM50T3AG

MSCSM120HM50T3AG

MOSFET 4N-CH 1200V 55A

Microchip Technology

6,679 -
MSCSM120HM50T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 2mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120VR1M31C1AG

MSCSM120VR1M31C1AG

MOSFET 2N-CH 1200V 89A

Microchip Technology

9,240 -
MSCSM120VR1M31C1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM31CTBL1NG

MSCSM120DUM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

8,165 -
MSCSM120DUM31CTBL1NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CTBL1NG

MSCSM120AM31CTBL1NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

3,104 -
MSCSM120AM31CTBL1NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM16T1AG

MSCSM120AM16T1AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

5,028 -
MSCSM120AM16T1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DHM31CTBL2NG

MSCSM120DHM31CTBL2NG

MOSFET 2N-CH 1200V 79A

Microchip Technology

5,827 -
MSCSM120DHM31CTBL2NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Asymmetrical - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MCB40P1200LB-TUB

MCB40P1200LB-TUB

MOSFET 2N-CH 1200V 58A SMPD

IXYS

4,053 -
MCB40P1200LB-TUB

Технический лист

- 9-SMD Power Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 58A - - - - - - - - Surface Mount SMPD
MSCSM120HM31T3AG

MSCSM120HM31T3AG

MOSFET 4N-CH 1200V 89A

Microchip Technology

8,784 -
MSCSM120HM31T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31TBL2NG

MSCSM120HM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

5,760 -
MSCSM120HM31TBL2NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DDUM31TBL2NG

MSCSM120DDUM31TBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

8,448 -
MSCSM120DDUM31TBL2NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel, Common Source - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 3mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
DF419MR20W3M1HFB11BPSA1

DF419MR20W3M1HFB11BPSA1

MOSFET 4N-CH 2000V 50A AG-EASY3B

Infineon Technologies

1 -
DF419MR20W3M1HFB11BPSA1

Технический лист

EasyPACK™ Module Tray Active MOSFET (Metal Oxide) 4 N-Channel - 2000V (2kV) 50A (Tj) 26.5mOhm @ 60A, 18V 5.15V @ 34mA 234nC @ 18V 7240pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
MSCSM120VR1M16CT3AG

MSCSM120VR1M16CT3AG

MOSFET 2N-CH 1200V 173A

Microchip Technology

6,962 -
MSCSM120VR1M16CT3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 6mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120HM31CTBL2NG

MSCSM120HM31CTBL2NG

MOSFET 4N-CH 1200V 79A

Microchip Technology

7,468 -
MSCSM120HM31CTBL2NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 79A 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 310W -55°C ~ 175°C (TJ) - - Chassis Mount -
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