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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
NVXK2VR80WXT2

NVXK2VR80WXT2

MOSFET 6N-CH 1200V 31A APM32

onsemi

3,969 -
NVXK2VR80WXT2

Технический лист

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
NVXK2PR80WXT2

NVXK2PR80WXT2

MOSFET 4N-CH 1200V 31A APM32

onsemi

2,267 -
NVXK2PR80WXT2

Технический лист

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 31A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 208W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1P45M12W2-1LA

M1P45M12W2-1LA

MOSFET 6N-CH 1200V ACEPACK DMT

STMicroelectronics

5,427 -
M1P45M12W2-1LA

Технический лист

ECOPACK® 32-PowerDIP Module (1.264", 32.10mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 30A (Tc) 60.5mOhm @ 20A, 18V 5V @ 1mA 100nC @ 18V 2086pF @ 800V - -40°C ~ 175°C (TJ) - - Through Hole ACEPACK DMT-32
NVXK2VR80WDT2

NVXK2VR80WDT2

MOSFET 6N-CH 1200V 20A APM32

onsemi

2,337 -
NVXK2VR80WDT2

Технический лист

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 20A (Tc) 116mOhm @ 20A, 20V 4.3V @ 5mA 56nC @ 20V 1154pF @ 800V 82W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
M1F80M12W2-1LA

M1F80M12W2-1LA

AUTOMOTIVE-GRADE ACEPACK DMT-32

STMicroelectronics

9,403 -
M1F80M12W2-1LA

Технический лист

* - Tube Active - - - - - - - - - - - - - - -
NXH040F120MNF1PG

NXH040F120MNF1PG

MOSFET 4N-CH 1200V 30A 22PIM

onsemi

6,006 -
NXH040F120MNF1PG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 30A (Tc) 56mOhm @ 25A, 20V 4.3V @ 10mA 122.1nC @ 20V 1505pF @ 800V 74W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 22-PIM (33.8x42.5)
MSCSM120AM50T1AG

MSCSM120AM50T1AG

MOSFET 2N-CH 1200V 55A

Microchip Technology

7,822 -
MSCSM120AM50T1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH010P90MNF1PG

NXH010P90MNF1PG

MOSFET 2N-CH 900V 154A

onsemi

3,091 -
NXH010P90MNF1PG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 900V 154A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 328W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH010P120MNF1PG

NXH010P120MNF1PG

MOSFET 2N-CH 1200V 114A

onsemi

5,990 -
NXH010P120MNF1PG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 114A (Tc) 14mOhm @ 100A, 20V 4.3V @ 40mA 454nC @ 20V 4707pF @ 800V 250W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH020P120MNF1PG

NXH020P120MNF1PG

MOSFET 2N-CH 1200V 51A

onsemi

2,676 -
NXH020P120MNF1PG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 51A (Tc) 30mOhm @ 50A, 20V 4.3V @ 20mA 213.5nC @ 20V 2420pF @ 800V 119W (Tj) -40°C ~ 150°C (TJ) - - Chassis Mount -
NXH006P120M3F2PTHG

NXH006P120M3F2PTHG

MOSFET 2N-CH 1200V 191A 36PIM

onsemi

1 -
NXH006P120M3F2PTHG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 191A (Tc) 8mOhm @ 100A, 18V 4.4V @ 80mA 622nC @ 20V 11914pF @ 800V 556W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount 36-PIM (56.7x62.8)
A2U8M12W3-FC

A2U8M12W3-FC

MOSFET 4N-CH 750V/1.2KV 180A

STMicroelectronics

9,411 -
A2U8M12W3-FC

Технический лист

ECOPACK® Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) Silicon Carbide (SiC) 750V, 1.2kV 180A, 140A 8mOhm @ 100A, 18V, 12.5mOhm @ 100A, 18V 4.2V @ 2mA, 4V @ 2mA 288nC @ 18V, 304nC @ 18V 7660pF @ 400V, 7370pF @ 800V - -55°C ~ 150°C (TJ) - - Chassis Mount -
CAB011A12GM3

CAB011A12GM3

MOSFET 2N-CH 1200V 141A MODULE

Wolfspeed, Inc.

5,026 -
CAB011A12GM3

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 141A (Tj) 13.9mOhm @ 150A, 15V 3.9V @ 34mA 354nC @ 15V 11000pF @ 1000V 10mW -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAB008A12GM3T

CAB008A12GM3T

MOSFET 2N-CH 1200V 182A MODULE

Wolfspeed, Inc.

1 -
CAB008A12GM3T

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 182A (Tj) 10.4mOhm @ 150A, 15V 3.6V @ 46mA 472nC @ 15V 13600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
BSM300D12P4G101

BSM300D12P4G101

MOSFET 2N-CH 1200V 291A MODULE

Rohm Semiconductor

2,899 -
BSM300D12P4G101

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 291A (Tc) - 4.8V @ 145.6mA - 30000pF @ 10V 925W (Tc) 175°C (TJ) - - Chassis Mount Module
MSCSM120HRM052NG

MSCSM120HRM052NG

MOSFET 4N-CH 1200V/700V 472A

Microchip Technology

5,419 -
MSCSM120HRM052NG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 472A (Tc), 442A (Tc) 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V 2.8V @ 18mA, 2.4V @ 16mA 1392nC @ 20V, 860nC @ 20V 18100pF @ 1000V, 18000pF @ 700V 1.846kW (Tc), 1.161kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FS03MR12A7MA2BHPSA1

FS03MR12A7MA2BHPSA1

MOSFET 6N-CH 1200V 310A

Infineon Technologies

8,397 -
FS03MR12A7MA2BHPSA1

Технический лист

HybridPACK™ Module Box Active Silicon Carbide (SiC) 6 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 310A 2.54mOhm @ 310A, 18V 4.55V @ 120mA 870nC @ 18V 25900pF @ 750V - -40°C ~ 175°C (TJ) - - Chassis Mount -
CAB003M09DM3

CAB003M09DM3

MOSFET 2N-CH 900V 518A MODULE

Wolfspeed, Inc.

1 -
CAB003M09DM3

Технический лист

- Module Bulk Active SiCFET (Silicon Carbide) 2 N-Channel (Half Bridge) - 900V 518A (Tc) 3.25mOhm @ 400A, 15V 3.5V @ 130mA 840nC @ 15V 20.4pF @ 900V 1.163kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount Module
CAR600M12HN6

CAR600M12HN6

MOSFET 2N-CH 1200V 908A MODULE

Wolfspeed, Inc.

1 -
CAR600M12HN6

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 908A (Tc) - - - 45300pF @ 0V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
CAR600M17HN6

CAR600M17HN6

MOSFET 2N-CH 1700V 986A MODULE

Wolfspeed, Inc.

7,731 -
CAR600M17HN6

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 986A (Tc) - - - 55700pF @ 0V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
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