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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
SMA5135

SMA5135

MOSFET 3N/3P-CH 60V 6A 12SIP

Sanken Electric USA Inc.

6,207 -
SMA5135

Технический лист

- 12-SIP Tube Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3 Phase Inverter) - 60V 6A (Ta) 220mOhm @ 3A, 4V, 220mOhm @ 3A, 10V 2V @ 250µA - 320pF @ 10V, 790pF @ 10V 4W (Ta), 29W (Tc) 150°C - - Through Hole 12-SIP
ALD212902SAL

ALD212902SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

4,140 -
ALD212902SAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD212904SAL

ALD212904SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

8,080 -
ALD212904SAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD212908SAL

ALD212908SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

9,980 -
ALD212908SAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110902PAL

ALD110902PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,660 -
ALD110902PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD110904PAL

ALD110904PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

6,363 -
ALD110904PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD111933PAL

ALD111933PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

6,835 -
ALD111933PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD114804SCL

ALD114804SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

5,086 -
ALD114804SCL

Технический лист

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114904PAL

ALD114904PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

2,925 -
ALD114904PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD210808SCL

ALD210808SCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

5,370 -
ALD210808SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
SP8J5TB

SP8J5TB

MOSFET 2P-CH 30V 7A 8SOP

Rohm Semiconductor

8,074 -
SP8J5TB

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 7A 28mOhm @ 7A, 10V 2.5V @ 1mA 25nC @ 5V 2600pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
SI7946DP-T1-E3

SI7946DP-T1-E3

MOSFET 2N-CH 150V 2.1A PPAK SO8

Vishay Siliconix

6,259 -
SI7946DP-T1-E3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.1A 150mOhm @ 3.3A, 10V 4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
SI7946DP-T1-GE3

SI7946DP-T1-GE3

MOSFET 2N-CH 150V 2.1A PPAK SO8

Vishay Siliconix

5,073 -
SI7946DP-T1-GE3

Технический лист

TrenchFET® PowerPAK® SO-8 Dual Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 150V 2.1A 150mOhm @ 3.3A, 10V 4V @ 250µA 20nC @ 10V - 1.4W -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8 Dual
ALD114813SCL

ALD114813SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

4,588 -
ALD114813SCL

Технический лист

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD212900SAL

ALD212900SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

5,721 -
ALD212900SAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 20mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD114913PAL

ALD114913PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

4,842 -
ALD114913PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
SLA5060

SLA5060

MOSFET 3N/3P-CH 60V 6A 12SIP

Sanken Electric USA Inc.

5,047 -
SLA5060

Технический лист

- 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 6A 220mOhm @ 3A, 4V - - 320pF @ 10V, 790pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
ALD212902PAL

ALD212902PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

8,712 -
ALD212902PAL

Технический лист

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD212904PAL

ALD212904PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

2,419 -
ALD212904PAL

Технический лист

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD212908PAL

ALD212908PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

7,960 -
ALD212908PAL

Технический лист

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
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