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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
ALD1110ESAL

ALD1110ESAL

MOSFET 2N-CH 10V 8SOIC

Advanced Linear Devices Inc.

8,205 -
ALD1110ESAL

Технический лист

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 2.5pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110808PCL

ALD110808PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

4,672 -
ALD110808PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD310700SCL

ALD310700SCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

4,746 -
ALD310700SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310702SCL

ALD310702SCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

7,714 -
ALD310702SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310704SCL

ALD310704SCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

6,333 -
ALD310704SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD114935PAL

ALD114935PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

6,525 -
ALD114935PAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
FDMD8280

FDMD8280

MOSFET 2N-CH 80V 11A 12POWER

onsemi

3,624 -

-

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 11A 8.2mOhm @ 11A, 10V 4V @ 250µA 44nC @ 10V 3050pF @ 40V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
ALD114904ASAL

ALD114904ASAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

4,545 -
ALD114904ASAL

Технический лист

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD210802PCL

ALD210802PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

9,854 -
ALD210802PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD210804PCL

ALD210804PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

9,635 -
ALD210804PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD210814PCL

ALD210814PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

8,615 -

-

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - - - - - Through Hole 16-PDIP
ALD212900ASAL

ALD212900ASAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

4,168 -
ALD212900ASAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD110802PCL

ALD110802PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

8,999 -
ALD110802PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD110804PCL

ALD110804PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

6,489 -
ALD110804PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD110814PCL

ALD110814PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

3,451 -
ALD110814PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
SLA5068 LF853

SLA5068 LF853

MOSFET 6N-CH 60V 7A 15SIP

Sanken Electric USA Inc.

3,786 -
SLA5068 LF853

Технический лист

- 15-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 5W 150°C (TJ) - - Through Hole 15-SIP
ALD1102BSAL

ALD1102BSAL

MOSFET 2P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

6,579 -
ALD1102BSAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - - - - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1101BSAL

ALD1101BSAL

MOSFET 2N-CH 10.6V 0.04A 8SOIC

Advanced Linear Devices Inc.

3,539 -
ALD1101BSAL

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 40mA - - - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD212914SAL

ALD212914SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

3,956 -

-

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Surface Mount 8-SOIC
SMA5117

SMA5117

MOSFET 6N-CH 250V 7A 12SIP

Sanken Electric USA Inc.

10 -
SMA5117

Технический лист

- 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 7A 250mOhm @ 3.5A, 10V 4V @ 1mA - 850pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
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