Доступно 24/7 по
0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD212908APALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
7,109 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD310704PCLMOSFET 4P-CH 8V 16PDIP |
3,728 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
ALD310708PCLMOSFET 4P-CH 8V 16PDIP |
3,316 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
ALD1101BPALMOSFET 2N-CH 10.6V 8PDIP |
3,396 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102BPALMOSFET 2P-CH 10.6V 8PDIP |
5,033 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD110808ASCLMOSFET 4N-CH 10.6V 16SOIC |
4,979 | - |
|
Технический лист |
EPAD® | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 16-SOIC |
|
ALD114804APCLMOSFET 4N-CH 10.6V 16PDIP |
7,794 | - |
|
Технический лист |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
IRF7530TRMOSFET 2N-CH 20V 5.4A MICRO8 |
6,036 | - |
|
Технический лист |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | 1310pF @ 15V | 1.3W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro8™ |
|
SD5000N PDIP 16L ROHSMOSFET 4N-CH 20V 0.05A 16DIP |
4,796 | - |
|
Технический лист |
- | 16-DIP (0.300", 7.62mm) | Obsolete | MOSFET (Metal Oxide) | 4 N-Channel | - | 20V | 50mA (Ta) | 70Ohm @ 1mA, 5V | 1.5V @ 1µA | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 16-DIP | |
|
SMA5118MOSFET 6N-CH 500V 5A 12SIP |
8 | - |
|
Технический лист |
- | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 500V | 5A | 1.4Ohm @ 2.5A, 10V | 4V @ 1mA | - | 770pF @ 10V | 4W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
SMA5112MOSFET 6N-CH 250V 7A 12SIP |
3,873 | - |
|
Технический лист |
- | 12-SIP | Tube | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 250V | 7A | 500mOhm @ 3.5A, 10V | 4V @ 1mA | - | 450pF @ 10V | 4W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
ALD110808APCLMOSFET 4N-CH 10.6V 16PDIP |
2,978 | - |
|
Технический лист |
EPAD® | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
SLA5037MOSFET 4N-CH 100V 10A 12SIP |
9,271 | - |
|
Технический лист |
- | 12-SIP Exposed Tab | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel | Logic Level Gate | 100V | 10A | 80mOhm @ 5A, 10V | 2V @ 250mA | - | 1630pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
ALD310702APCLMOSFET 4P-CH 8V 16PDIP |
3,420 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
ALD310704APCLMOSFET 4P-CH 8V 16PDIP |
3,289 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
ALD310708APCLMOSFET 4P-CH 8V 16PDIP |
4,185 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
|
SLA5041MOSFET 4N-CH 200V 10A 12SIP |
9,059 | - |
|
Технический лист |
- | 12-SIP Exposed Tab | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel | Logic Level Gate | 200V | 10A | 175mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 5W | 150°C (TJ) | - | - | Through Hole | 12-SIP |
|
EPC2100ENGRTMOSFET 2N-CH 30V 10A DIE |
6,740 | - |
|
Технический лист |
eGaN® | Die | Tape & Reel (TR) | Obsolete | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 30V | 10A (Ta), 40A (Ta) | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V | 2.5V @ 4mA, 2.5V @ 16mA | 4.9nC @ 15V, 19nC @ 15V | 475pF @ 15V, 1960pF @ 15V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
ALD1101APALMOSFET 2N-CH 10.6V 8PDIP |
4,524 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
|
ALD1102APALMOSFET 2P-CH 10.6V 8PDIP |
8,400 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) Matched Pair | - | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
