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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
ALD114804ASCL

ALD114804ASCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.

7,166 -
ALD114804ASCL

Технический лист

EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD114904APAL

ALD114904APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

5,962 -
ALD114904APAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD114804PCL

ALD114804PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

6,312 -
ALD114804PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD114813PCL

ALD114813PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

3,675 -
ALD114813PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD310700PCL

ALD310700PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

5,440 -
ALD310700PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD310702PCL

ALD310702PCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

6,176 -
ALD310702PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD210800PCL

ALD210800PCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

4,558 -
ALD210800PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 20mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD212914PAL

ALD212914PAL

MOSFET 2N-CH 10.6V 0.08A 8PDIP

Advanced Linear Devices Inc.

2,264 -

-

EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Through Hole 8-PDIP
ALD310700ASCL

ALD310700ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

3,644 -
ALD310700ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310702ASCL

ALD310702ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

9,432 -
ALD310702ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310704ASCL

ALD310704ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

2,227 -
ALD310704ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD310708ASCL

ALD310708ASCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

4,838 -
ALD310708ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD210808ASCL

ALD210808ASCL

MOSFET 4N-CH 10.6V 0.08A 16SOIC

Advanced Linear Devices Inc.

7,513 -
ALD210808ASCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
ALD212908ASAL

ALD212908ASAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.

5,049 -
ALD212908ASAL

Технический лист

EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
SLA5061

SLA5061

MOSFET 3N/3P-CH 60V 10A/6A 12SIP

Sanken Electric USA Inc.

8,705 -
SLA5061

Технический лист

- 12-SIP Exposed Tab Bulk Active MOSFET (Metal Oxide) 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 10A, 6A 140mOhm @ 5A, 4V - - 460pF @ 10V, 1200pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
ALD114835PCL

ALD114835PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

2,382 -
ALD114835PCL

Технический лист

EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD110908APAL

ALD110908APAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

7,794 -
ALD110908APAL

Технический лист

EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
SLA5075

SLA5075

MOSFET 6N-CH 500V 5A 15ZIP

Sanken Electric USA Inc.

5,827 -
SLA5075

Технический лист

- 15-SIP Exposed Tab, Formed Leads Tube Not For New Designs MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 5W 150°C (TJ) - - Through Hole 15-ZIP
ALD210808APCL

ALD210808APCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

3,750 -
ALD210808APCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
FDMD8260LET60

FDMD8260LET60

MOSFET 2N-CH 60V 15A 12POWER

onsemi

7,272 -
FDMD8260LET60

Технический лист

PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V 1.1W -55°C ~ 175°C (TJ) - - Surface Mount 12-Power3.3x5
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