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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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BSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE |
25 | - |
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Технический лист |
- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 80A (Tc) | - | 4V @ 13.2mA | - | 800pF @ 10V | 600W | 175°C (TJ) | - | - | Chassis Mount | Module |
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APTM20AM04FGMOSFET 2N-CH 200V 372A SP6 |
7 | - |
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Технический лист |
- | SP6 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 200V | 372A | 5mOhm @ 186A, 10V | 5V @ 10mA | 560nC @ 10V | 28900pF @ 25V | 1250W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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FF2MR12KM1HPHPSA1MOSFET 2N-CH 1200V AG-62MMHB |
8 | - |
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Технический лист |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF4MR20KM1HHPSA1MOSFET 2N-CH 2000V AG-62MMHB |
11 | - |
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Технический лист |
C | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 2000V (2kV) | 280A (Tc) | 5.3mOhm @ 300A, 18V | 5.15V @ 168mA | 1170nC @ 18V | 36100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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CAB400M12XM3MOSFET 2N-CH 1200V 395A |
24 | - |
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Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 395A (Tc) | 5.3mOhm @ 400A, 15V | 3.6V @ 92mA | 908nC @ 15V | 2450pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FS05MR12A6MA1BBPSA1MOSFET 1200V 200A AG-HYBRIDD |
9 | - |
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Технический лист |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | 200A | - | - | - | - | - | - | - | - | Chassis Mount | AG-HYBRIDD-2 |
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BSM250D17P2E004MOSFET 2N-CH 1700V 250A MODULE |
14 | - |
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Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1700V (1.7kV) | 250A (Tc) | - | 4V @ 66mA | - | 30000pF @ 10V | 1800W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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CAS300M17BM2MOSFET 2N-CH 1700V 325A MODULE |
1 | - |
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Технический лист |
Z-Rec® | Module | Box | Last Time Buy | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1700V (1.7kV) | 325A (Tc) | 10mOhm @ 225A, 20V | 2.3V @ 15mA (Typ) | 1076nC @ 20V | 20000pF @ 1000V | 1760W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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EAB450M12XM3MOSFET 2N-CH 1200V 450A |
3 | - |
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Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 450A (Tc) | 3.7mOhm @ 450A, 15V | 3.6V @ 132mA | 1330nC @ 15V | 38000pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCSM170AM058CD3AGMOSFET 2N-CH 1700V 353A |
8 | - |
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Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 1700V (1.7kV) | 353A (Tc) | 7.5mOhm @ 180A, 20V | 3.3V @ 15mA | 1068nC @ 20V | 19800pF @ 1000V | 1.642kW (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FS03MR12A6MA1BBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD |
7 | - |
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Технический лист |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-HYBRIDD-2 |
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CAB760M12HM3MOSFET 2N-CH 1200V 1015A MODULE |
6 | - |
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Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 1015A (Tc) | 1.73mOhm @ 760A, 15V | 3.6V @ 280mA | 2724nC @ 15V | 79400pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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DMN2991UDR4-7RMOSFET 2N-CH 20V 0.5A 6DFN |
119 | - |
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Технический лист |
- | 6-XFDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | Logic Level Gate | 20V | 500mA (Ta) | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.28nC @ 4.5V | 14.6pF @ 16V | 380mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | X2-DFN1010-6 (Type UXC) |
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2N7002HSXMOSFET 2N-CH 60V 0.32A 6TSSOP |
326 | - |
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Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | - | 2 N-Channel (Dual) | - | 60V | 320mA (Ta) | 1.6Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.5nC @ 4.5V | 34pF @ 10V | 420mW | -55°C ~ 150°C (TA) | Automotive | AEC-Q101 | Surface Mount | 6-TSSOP |
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DMN3015LSD-13MOSFET 2N-CH 30V 8.4A 8SO |
315 | - |
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Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 8.4A (Ta) | 15mOhm @ 12A, 10V | 2.5V @ 250µA | 25.1nC @ 10V | 1415pF @ 15V | 1.2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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DMT47M2LDVQ-13MOSFET 2N-CH 40V 11.9A PWRDI3333 |
30 | - |
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Технический лист |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 11.9A (Ta), 30.2A (Tc) | 10.8mOhm @ 20A, 10V | 2.3V @ 250µA | 14nC @ 10V | 891pF @ 20V | 2.34W (Ta), 14.8W (Tc) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerDI3333-8 (Type UXC) |
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CSD85301Q2TMOSFET 2N-CH 20V 5A 6WSON |
1,024 | - |
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Технический лист |
NexFET™ | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 5V Drive | 20V | 5A | 27mOhm @ 5A, 4.5V | 1.2V @ 250µA | 5.4nC @ 4.5V | 469pF @ 10V | 2.3W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-WSON (2x2) |
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SQJQ904E-T1_GE3MOSFET 2N-CH 40V 100A PPAK8X8 |
79 | - |
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Технический лист |
TrenchFET® | PowerPAK® 8 x 8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 100A (Tc) | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | 5900pF @ 20V | 75W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PowerPAK® 8 x 8 Dual |
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ALD1115PALMOSFET N/P-CH 10.6V 8PDIP |
50 | - |
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Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | N and P-Channel Complementary | - | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD1103PBLMOSFET 2N/2P-CH 10.6V 14PDIP |
37 | - |
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Технический лист |
- | 14-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N and 2 P-Channel Matched Pair | - | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 14-PDIP |
