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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
FS55MR12W1M1HB11NPSA1

FS55MR12W1M1HB11NPSA1

MOSFET 6N-CH 1200V 15A AG-EASY1B

Infineon Technologies

18 -
FS55MR12W1M1HB11NPSA1

Технический лист

EasyPACK™, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (Full Bridge) - 1200V (1.2kV) 15A (Tj) 79mOhm @ 15A, 18V 5.15V @ 6mA 45nC @ 18V 1350pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
MSCSM70AM19T1AG

MSCSM70AM19T1AG

MOSFET 2N-CH 700V 124A

Microchip Technology

21 -
MSCSM70AM19T1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM31CT1AG

MSCSM120AM31CT1AG

MOSFET 2N-CH 1200V 89A SP1F

Microchip Technology

7 -
MSCSM120AM31CT1AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
MSCSM70TLM44C3AG

MSCSM70TLM44C3AG

MOSFET 4N-CH 700V 58A SP3F

Microchip Technology

7 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 58A (Tc) 44mOhm @ 30A, 20V 2.7V @ 2mA 99nC @ 20V 2010pF @ 700V 176W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170AM45CT1AG

MSCSM170AM45CT1AG

MOSFET 2N-CH 1700V 64A

Microchip Technology

6 -
MSCSM170AM45CT1AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120TLM50C3AG

MSCSM120TLM50C3AG

MOSFET 4N-CH 1200V 55A SP3F

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170DUM23T3AG

MSCSM170DUM23T3AG

MOSFET 2N-CH 1700V 124A SP3F

Microchip Technology

14 -

-

- Module Tube Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70HM19T3AG

MSCSM70HM19T3AG

MOSFET 4N-CH 700V 124A

Microchip Technology

7 -
MSCSM70HM19T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70DUM10T3AG

MSCSM70DUM10T3AG

MOSFET 2N-CH 700V 241A SP3F

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70AM10T3AG

MSCSM70AM10T3AG

MOSFET 2N-CH 700V 241A

Microchip Technology

3 -
MSCSM70AM10T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120DUM16T3AG

MSCSM120DUM16T3AG

MOSFET 2N-CH 1200V 173A SP3F

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 173A (Tc) 16mOhm @ 80A, 20V 2.8V @ 2mA 464nC @ 20V 6040pF @ 1000V 745W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170TLM45C3AG

MSCSM170TLM45C3AG

MOSFET 4N-CH 1700V 64A SP3F

Microchip Technology

6 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170DUM15T3AG

MSCSM170DUM15T3AG

MOSFET 2N-CH 1700V 181A SP3F

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70TAM19T3AG

MSCSM70TAM19T3AG

MOSFET 6N-CH 700V 124A

Microchip Technology

5 -
MSCSM70TAM19T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70AM07T3AG

MSCSM70AM07T3AG

MOSFET 2N-CH 700V 353A

Microchip Technology

6 -
MSCSM70AM07T3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM70DUM07T3AG

MSCSM70DUM07T3AG

MOSFET 2N-CH 700V 353A SP3F

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM120DUM11T3AG

MSCSM120DUM11T3AG

MOSFET 2N-CH 1200V 254A SP3F

Microchip Technology

3 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1067W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170HM45CT3AG

MSCSM170HM45CT3AG

MOSFET 4N-CH 1700V 64A

Microchip Technology

3 -
MSCSM170HM45CT3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170DUM11T3AG

MSCSM170DUM11T3AG

MOSFET 2N-CH 1700V 240A SP3F

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1140W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
BSM120D12P2C005

BSM120D12P2C005

MOSFET 2N-CH 1200V 120A MODULE

Rohm Semiconductor

7 -
BSM120D12P2C005

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 120A (Tc) - 2.7V @ 22mA - 14000pF @ 10V 780W -40°C ~ 150°C (TJ) - - - Module
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