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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
MSCSM120HM31CT3AG

MSCSM120HM31CT3AG

MOSFET 4N-CH 1200V 89A SP3F

Microchip Technology

3 -

-

- Module Tube Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70AM07CT3AG

MSCSM70AM07CT3AG

MOSFET 2N-CH 700V 353A SP3F

Microchip Technology

3 -
MSCSM70AM07CT3AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 353A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 988W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM70TLM10C3AG

MSCSM70TLM10C3AG

MOSFET 4N-CH 700V 241A MODULE

Microchip Technology

15 -

-

- Module Box Active Silicon Carbide (SiC) 4 N-Channel - 700V 241A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA (Typ) 430nC @ 20V 9000pF @ 700V 690W (Tc) -40°C ~ 175°C (TJ) - - Through Hole Module
MSCSM120AM11CT3AG

MSCSM120AM11CT3AG

MOSFET 2N-CH 1200V 254A SP3F

Microchip Technology

3 -
MSCSM120AM11CT3AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 254A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9060pF @ 1000V 1.067kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCM20AM058G

MSCM20AM058G

MOSFET 2N-CH 200V 280A LP8

Microchip Technology

3 -
MSCM20AM058G

Технический лист

- Module Box Active MOSFET (Metal Oxide) 2 N Channel (Phase Leg) - 200V 280A (Tc) - - - - - - - - Chassis Mount LP8
CAS175M12BM3

CAS175M12BM3

MOSFET 2N-CH 1200V 228A

Wolfspeed, Inc.

3 -
CAS175M12BM3

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 228A (Tc) 10.4mOhm @ 175A, 15V 3.6V @ 43mA 422nC @ 15V 12900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
WAS175M12BM3

WAS175M12BM3

MOSFET 2N-CH 1200V 228A

Wolfspeed, Inc.

4 -
WAS175M12BM3

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 228A (Tc) 10.4mOhm @ 175A, 15V 3.6V @ 43mA 422nC @ 15V 12900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
BSM180D12P3C007

BSM180D12P3C007

MOSFET 2N-CH 1200V 180A MODULE

Rohm Semiconductor

13 -
BSM180D12P3C007

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 180A (Tc) - 5.6V @ 50mA - 900pF @ 10V 880W 175°C (TJ) - - Surface Mount Module
MSCSM170TLM15CAG

MSCSM170TLM15CAG

MOSFET 4N-CH 1700V 179A SP6C

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70TLM07CAG

MSCSM70TLM07CAG

MOSFET 4N-CH 700V 349A SP6C

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 349A (Tc) 6.4mOhm @ 120A, 20V 2.4V @ 12mA 645nC @ 20V 13500pF @ 700V 966W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM70VR1M10CTPAG

MSCSM70VR1M10CTPAG

MOSFET 6N-CH 700V 238A

Microchip Technology

2 -
MSCSM70VR1M10CTPAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 700V 238A (Tc) 9.5mOhm @ 80A, 20V 2.4V @ 8mA 430nC @ 20V 9000pF @ 700V 674W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
CAS350M12BM3

CAS350M12BM3

MOSFET 2N-CH 1200V 417A

Wolfspeed, Inc.

4 -
CAS350M12BM3

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 417A (Tc) 5.2mOhm @ 350A, 15V 3.6V @ 85mA 844nC @ 15V 25700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM120TLM11CAG

MSCSM120TLM11CAG

MOSFET 4N-CH 1200V 251A SP6C

Microchip Technology

4 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 251A (Tc) 10.4mOhm @ 120A, 20V 2.8V @ 3mA 696nC @ 20V 9000pF @ 1000V 1042W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM170TLM11CAG

MSCSM170TLM11CAG

MOSFET 4N-CH 1700V 238A SP6C

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1114W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
CAS530M12BM3

CAS530M12BM3

MOSFET 2N-CH 1200V 630A

Wolfspeed, Inc.

4 -
CAS530M12BM3

Технический лист

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 630A (Tc) 3.47mOhm @ 530A, 15V 3.6V @ 127mA 1362nC @ 15V 38900pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM120TLM08CAG

MSCSM120TLM08CAG

MOSFET 4N-CH 1200V 333A SP6C

Microchip Technology

6 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 333A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12000pF @ 1000V 1378W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM120AM027CT6AG

MSCSM120AM027CT6AG

MOSFET 2N-CH 1200V 733A SP6C

Microchip Technology

12 -
MSCSM120AM027CT6AG

Технический лист

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 733A (Tc) 3.5mOhm @ 360A, 20V 2.8V @ 9mA 2088nC @ 20V 27000pF @1000V 2.97kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
BSM400D12P3G002

BSM400D12P3G002

MOSFET 2N-CH 1200V 400A MODULE

Rohm Semiconductor

2 -
BSM400D12P3G002

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tc) - 5.6V @ 109.2mA - 17000pF @ 10V 1570W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
MSCSM170HM087CAG

MSCSM170HM087CAG

MOSFET 4N-CH 1700V 238A

Microchip Technology

9 -
MSCSM170HM087CAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 238A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1.114kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM039CT6AG

MSCSM170AM039CT6AG

MOSFET 2N-CH 1700V 523A

Microchip Technology

2 -
MSCSM170AM039CT6AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 523A (Tc) 5mOhm @ 270A, 20V 3.3V @ 22.5mA 1602nC @ 20V 29700pF @ 1000V 2.4kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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