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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
GCMX040A120B3H1P

GCMX040A120B3H1P

MOSFET 4N-CH 1200V 53A

SemiQ

17 -
GCMX040A120B3H1P

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH015P120M3F1PTG

NXH015P120M3F1PTG

MOSFET 2N-CH 1200V 77A

onsemi

13 -
NXH015P120M3F1PTG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 77A (Tc) 20mOhm @ 60A, 18V 4.4V @ 30mA 211nC @ 18V 4696pF @ 800V 198W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
DF14MR12W1M1HFB67BPSA1

DF14MR12W1M1HFB67BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
DF14MR12W1M1HFB67BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
NXH008P120M3F1PG

NXH008P120M3F1PG

MOSFET 2N-CH 1200V 145A

onsemi

18 -
NXH008P120M3F1PG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 145A (Tc) 10.9mOhm @ 120A, 18V 4.4V @ 60mA 419nC @ 18V 8334pF @ 800V 382W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B2H1P

GCMX020A120B2H1P

MOSFET 4N-CH 1200V 102A

SemiQ

10 -
GCMX020A120B2H1P

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF11MR12W2M1HPB11BPSA1

FF11MR12W2M1HPB11BPSA1

MOSFET 1200V

Infineon Technologies

18 -
FF11MR12W2M1HPB11BPSA1

Технический лист

CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
GCMX010A120B3B1P

GCMX010A120B3B1P

MOSFET 2N-CH 1200V 173A

SemiQ

9 -
GCMX010A120B3B1P

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
GCMX020A120B3H1P

GCMX020A120B3H1P

MOSFET 4N-CH 1200V 93A

SemiQ

4 -
GCMX020A120B3H1P

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF17MR12W1M1HPB11BPSA1

FF17MR12W1M1HPB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

24 -
FF17MR12W1M1HPB11BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
DF8MR12W1M1HFB67BPSA1

DF8MR12W1M1HFB67BPSA1

MOSFET 2N-CH 1200V 45A AG-EASY1B

Infineon Technologies

22 -
DF8MR12W1M1HFB67BPSA1

Технический лист

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB70BPSA1

FF17MR12W1M1HB70BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
FF17MR12W1M1HB70BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF17MR12W1M1HB17BPSA1

FF17MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V 50A AG-EASY1B

Infineon Technologies

24 -

-

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
NXH011F120M3F2PTHG

NXH011F120M3F2PTHG

MOSFET 4N-CH 1200V 105A 34PIM

onsemi

13 -
NXH011F120M3F2PTHG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tc) 16mOhm @ 100A, 18V 4.4V @ 60mA 284nC @ 18V 6211.6pF @ 800V 244W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
FF8MR12W1M1HB70BPSA1

FF8MR12W1M1HB70BPSA1

MOSFET

Infineon Technologies

20 -
FF8MR12W1M1HB70BPSA1

Технический лист

- - Tray Active - - - - - - - - - - - - - - -
FF7MR12W1M1HB17BPSA1

FF7MR12W1M1HB17BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

24 -

-

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
NXH007F120M3F2PTHG

NXH007F120M3F2PTHG

MOSFET 4N-CH 1200V 149A 34PIM

onsemi

6 -
NXH007F120M3F2PTHG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 149A (Tc) 10mOhm @ 120A, 18V 4.4V @ 60mA 407nC @ 18V 9090pF @ 800V 353W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 34-PIM (56.7x42.5)
MSCSM170HRM451AG

MSCSM170HRM451AG

MOSFET 4N-CH 1700V/1200V 64A

Microchip Technology

10 -
MSCSM170HRM451AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV), 1200V (1.2kV) 64A (Tc), 89A (Tc) 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V 3.2V @ 2.5mA, 2.8V @ 3mA 178nC @ 20V, 232nC @ 20V 3300pF @ 1000V, 3020pF @ 1000V 319W (Tc), 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
NXH008T120M3F2PTHG

NXH008T120M3F2PTHG

MOSFET 4N-CH 1200V 129A 29PIM

onsemi

18 -
NXH008T120M3F2PTHG

Технический лист

- Module Tray Active Silicon Carbide (SiC) 4 N-Channel - 1200V (1.2kV) 129A (Tc) 11.5mOhm @ 100A, 18V 4.4V @ 60mA 454nC @ 20V 9129pF @ 800V 371W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount 29-PIM (56.7x42.5)
MSCSM120HRM311AG

MSCSM120HRM311AG

MOSFET 4N-CH 1200V/700V 89A

Microchip Technology

10 -
MSCSM120HRM311AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV), 700V 89A (Tc), 124A (Tc) 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V 2.8V @ 3mA, 2.4V @ 4mA 232nC @ 20V, 215nC @ 20V 3020pF @ 1000V, 4500pF @ 700V 395W (Tc), 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF6MR12W2M1HPB11BPSA1

FF6MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 200A MODULE

Infineon Technologies

18 -
FF6MR12W2M1HPB11BPSA1

Технический лист

HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
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