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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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BSM600D12P3G001MOSFET 2N-CH 1200V 600A MODULE |
7 | - |
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Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 600A (Tc) | - | 5.6V @ 182mA | - | 31000pF @ 10V | 2450W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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FS03MR12A6MA1LBBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD |
2 | - |
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Технический лист |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-HYBRIDD-2 |
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CAS480M12HM3MOSFET 2N-CH 1200V 640A MODULE |
1 | - |
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Технический лист |
- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 640A (Tc) | 2.97mOhm @ 480A, 15V | 3.6V @ 160mA | 1590nC @ 15V | 43100pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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MCQ4503B-TPMOSFET N/P-CH 30V 5.6A 8SOP |
362 | - |
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Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 30V | 5.6A (Ta), 4.4A (Ta) | 25mOhm @ 5.6A, 10V | 1.5V @ 250µA, 1.4V @ 250µA | 4.8nC @ 4.5V, 7.2nC @ 10V | 535pF @ 15V, 680pF @ 15V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |
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SIS932EDN-T1-GE3MOSFET 2N-CH 30V 6A PPAK 1212 |
743 | - |
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Технический лист |
TrenchFET® | PowerPAK® 1212-8 Dual | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 30V | 6A (Tc) | 22mOhm @ 10A, 4.5V | 1.4V @ 250µA | 14nC @ 4.5V | 1000pF @ 15V | 2.6W (Ta), 23W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8 Dual |
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CSD87333Q3DTMOSFET 2N-CH 30V 15A 8VSON |
284 | - |
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Технический лист |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 5V Drive | 30V | 15A | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 4.6nC @ 4.5V | 662pF @ 15V | 6W | 125°C (TJ) | - | - | Surface Mount | 8-VSON (3.3x3.3) |
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ZXMN2A04DN8TAMOSFET 2N-CH 20V 5.9A 8SO |
542 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.9A | 25mOhm @ 5.9A, 4.5V | 700mV @ 250µA (Min) | 22.1nC @ 5V | 1880pF @ 10V | 1.8W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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CSD86336Q3DTMOSFET 2N-CH 25V 20A 8VSON |
1 | - |
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Технический лист |
NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate, 5V Drive | 25V | 20A (Ta) | 9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | 1.9V @ 250µA, 1.6V @ 250µA | 3.8nC @ 45V, 7.4nC @ 45V | 494pF @ 12.5V, 970pF @ 12.5V | 6W | -55°C ~ 125°C | - | - | Surface Mount | 8-VSON (3.3x3.3) |
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ALD110902SALMOSFET 2N-CH 10.6V 8SOIC |
27 | - |
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Технический лист |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4.2V | 220mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD212900PALMOSFET 2N-CH 10.6V 0.08A 8PDIP |
28 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD110900APALMOSFET 2N-CH 10.6V 8PDIP |
49 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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FMM75-01FMOSFET 2N-CH 100V 75A I4-PAC |
15 | - |
|
- |
HiPerFET™ | i4-Pac™-5 | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 75A | 25mOhm @ 50A, 10V | 4V @ 4mA | 180nC @ 10V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | ISOPLUS i4-PAC™ |
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APTM50H14FT3GMOSFET 4N-CH 500V 26A SP3 |
13 | - |
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Технический лист |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 26A | 168mOhm @ 13A, 10V | 5V @ 1mA | 72nC @ 10V | 3259pF @ 25V | 208W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTC60DSKM24T3GMOSFET 2N-CH 600V 95A SP3 |
7 | - |
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Технический лист |
CoolMOS™ | SP3 | Tray | Active | MOSFET (Metal Oxide) | 2 N Channel (Dual Buck Chopper) | - | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTM50HM65FT3GMOSFET 4N-CH 500V 51A SP3 |
8 | - |
|
Технический лист |
- | SP3 | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 500V | 51A | 78mOhm @ 25.5A, 10V | 5V @ 2.5mA | 140nC @ 10V | 7000pF @ 25V | 390W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP3 |
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APTM50AM38STGMOSFET 2N-CH 500V 90A SP4 |
6 | - |
|
Технический лист |
- | SP4 | Bulk | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP4 |
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MSCSM70TLM19C3AGMOSFET 4N-CH 700V 124A SP3F |
5 | - |
|
- |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 4 N-Channel (Three Level Inverter) | - | 700V | 124A (Tc) | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215nC @ 20V | 4500pF @ 700V | 365W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
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MSCSM70VR1M10CT3AGMOSFET 2N-CH 700V 241A |
4 | - |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N Channel (Phase Leg) | - | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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MSCM20XM10T3XGMOSFET 6N-CH 200V 108A SP3X |
9 | - |
|
Технический лист |
- | Module | Bulk | Active | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 200V | 108A (Tc) | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 161nC @ 10V | 10700pF @ 50V | 341W (Tc) | -40°C ~ 125°C (Tc) | - | - | Chassis Mount | SP3X |
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MSCSM120HM31CT3AGMOSFET 4N-CH 1200V 89A SP3F |
3 | - |
|
- |
- | Module | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel | - | 1200V (1.2kV) | 89A (Tc) | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 232nC @ 20V | 3020pF @ 1000V | 395W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP3F |
