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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
SQJQ904E-T1_GE3

SQJQ904E-T1_GE3

MOSFET 2N-CH 40V 100A PPAK8X8

Vishay Siliconix

79 -
SQJQ904E-T1_GE3

Технический лист

TrenchFET® PowerPAK® 8 x 8 Dual Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 100A (Tc) 3.4mOhm @ 20A, 10V 3.5V @ 250µA 75nC @ 10V 5900pF @ 20V 75W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® 8 x 8 Dual
ALD1115PAL

ALD1115PAL

MOSFET N/P-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

50 -
ALD1115PAL

Технический лист

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) N and P-Channel Complementary - 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD1103PBL

ALD1103PBL

MOSFET 2N/2P-CH 10.6V 14PDIP

Advanced Linear Devices Inc.

37 -
ALD1103PBL

Технический лист

- 14-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 14-PDIP
NVXK2VR40WXT2

NVXK2VR40WXT2

MOSFET 6N-CH 1200V 55A APM32

onsemi

14 -
NVXK2VR40WXT2

Технический лист

- 32-PowerDIP Module (1.449", 36.80mm) Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 59mOhm @ 35A, 20V 4.3V @ 10mA 106nC @ 20V 1789pF @ 800V 319W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole APM32
FF17MR12W1M1HB11BPSA1

FF17MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

13 -
FF17MR12W1M1HB11BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FS33MR12W1M1HB11BPSA1

FS33MR12W1M1HB11BPSA1

MOSFET 1200V AG-EASY1B

Infineon Technologies

3 -
FS33MR12W1M1HB11BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1

FF8MR12W1M1HS4PB11BPSA1

MOSFET 2N-CH 1200V AG-EASY1B

Infineon Technologies

4 -
FF8MR12W1M1HS4PB11BPSA1

Технический лист

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 100A (Tj) 8.1mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1B
F3L8MR12W2M1HPB11BPSA1

F3L8MR12W2M1HPB11BPSA1

MOSFET 2N-CH 1200V 85A AG-EASY2B

Infineon Technologies

24 -
F3L8MR12W2M1HPB11BPSA1

Технический лист

EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 85A (Tj) 12mOhm @ 100A, 18V 5.15V @ 40mA 297nC @ 18V 8800pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY2B
CBB032M12FM3T

CBB032M12FM3T

MOSFET 4N-CH 1200V 39A

Wolfspeed, Inc.

22 -
CBB032M12FM3T

Технический лист

- Module Box Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 39A (Tj) 44mOhm @ 30A, 15V 3.9V @ 11mA 118nC @ 15V 3500pF @ 1000V - -40°C ~ 150°C (TJ) - - Chassis Mount -
FS13MR12W2M1HB70BPSA1

FS13MR12W2M1HB70BPSA1

MOSFET 6N-CH 1200V 62.5A

Infineon Technologies

15 -
FS13MR12W2M1HB70BPSA1

Технический лист

CoolSiC™ - Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 62.5A (Tc) 11.7mOhm @ 62.5A, 18V 5.15V @ 28mA 200nC @ 18V 6050pF @ 800V - - - - - -
FF6MR12KM1HHPSA1

FF6MR12KM1HHPSA1

MOSFET

Infineon Technologies

10 -
FF6MR12KM1HHPSA1

Технический лист

- - Tray Active - - - - - - - - - - - - - - -
CAB006A12GM3

CAB006A12GM3

MOSFET 2N-CH 1200V 200A

Wolfspeed, Inc.

10 -
CAB006A12GM3

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 200A (Tj) 6.9mOhm @ 200A, 15V 3.6V @ 69mA 708nC @ 15V 20400pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount -
MSCSM170HM23CT3AG

MSCSM170HM23CT3AG

MOSFET 4N-CH 1700V 124A

Microchip Technology

2 -
MSCSM170HM23CT3AG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM300D12P2E001

BSM300D12P2E001

MOSFET 2N-CH 1200V 300A MODULE

Rohm Semiconductor

11 -
BSM300D12P2E001

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 300A (Tc) - 4V @ 68mA - 35000pF @ 10V 1875W -40°C ~ 150°C (TJ) - - Chassis Mount Module
NVVR26A120M1WSB

NVVR26A120M1WSB

MOSFET 2N-CH 1200V AHPM15-CDE

onsemi

10 -
NVVR26A120M1WSB

Технический лист

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDE
NVVR26A120M1WSS

NVVR26A120M1WSS

MOSFET 2N-CH 1200V AHPM15-CDI

onsemi

9 -
NVVR26A120M1WSS

Технический лист

- 15-PowerDIP Module (2.441", 62.00mm) Tube Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 400A (Tj) 2.6mOhm @ 400A, 20V 3.2V @ 150mA 1.75µC @ 20V 31700pF @ 800V 1kW (Tj) -40°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole AHPM15-CDI
CAB530M12BM3

CAB530M12BM3

MOSFET 2N-CH 1200V 530A MODULE

Wolfspeed, Inc.

4 -
CAB530M12BM3

Технический лист

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 530A 3.55mOhm @ 530A, 15V 3.6V @ 140mA 1362nC @ 4V 39600pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
WAB400M12BM3

WAB400M12BM3

MOSFET 2N-CH 1200V 468A MODULE

Wolfspeed, Inc.

21 -
WAB400M12BM3

Технический лист

- Module Bulk Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 468A (Tc) 4.25mOhm @ 400A, 15V 3.6V @ 106mA 1040nC @ 15V 29700pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
CAS310M17BM3

CAS310M17BM3

SIC 1700V 310A

Wolfspeed, Inc.

5 -
CAS310M17BM3

Технический лист

- Module Box Active Silicon Carbide (SiC) - - 1700V (1.7kV) 310A - - - - - - - - Chassis Mount -
MSCSM170AM029CT6LIAG

MSCSM170AM029CT6LIAG

MOSFET 2N-CH 1700V 676A

Microchip Technology

8 -
MSCSM170AM029CT6LIAG

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 676A (Tc) 3.75mOhm @ 360A, 20V 3.3V @ 30mA 2136nC @ 20V 39600pF @ 1000V 3kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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