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0755-82798135FET, массивы MOSFET
| Фото | Номер производителя | Наличие | Цена | Количество | Технический лист | Серия | Корпус/корпус | Упаковка | Состояние продукта | Технология | Конфигурация | Характеристика FET | Напряжение сток-исток (Vdss) | Ток - Непрерывный сток (Id) @ 25°C | Rds On (Макс.) @ Id, Vgs | Vgs(th) (Макс.) @ Id | Заряд затвора (Qg) (Макс.) @ Vgs | Входная емкость (Ciss) (Макс.) @ Vds | Мощность - макс. | Рабочая температура | Марка | Квалификация | Тип крепления | Устройство поставщика Упаковка |
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CAB500M17HM3MOSFET 2N-CH 1700V 653A MODULE |
6,839 | - |
|
Технический лист |
- | Module | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1700V (1.7kV) | 653A (Tc) | 2.6mOhm @ 500A, 15V | 3.6V @ 203mA | 1992nC @ 15V | 64900pF @ 1200V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | Module |
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PMDXB1200UPEZMOSFET 2P-CH 30V 0.41A 6DFN |
797 | - |
|
Технический лист |
- | 6-XFDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | - | 30V | 410mA | 1.4Ohm @ 410mA, 4.5V | 950mV @ 250µA | 1.2nC @ 4.5V | 43.2pF @ 15V | 285mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN1010B-6 |
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BSS8402DW-TPMOSFET N/P-CH 60V/50V SOT363 |
896 | - |
|
Технический лист |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 60V, 50V | 115mA, 130mA | 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V | 2.5V @ 250µA, 2V @ 250µA | - | 50pF @ 25V, 30pF @ 25V | 200mW | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-363 |
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QH8JA1TCRMOSFET 2P-CH 20V 5A TSMT8 |
59 | - |
|
Технический лист |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | - | 2 P-Channel (Dual) | - | 20V | 5A | 38mOhm @ 5A, 4.5V | 1.2V @ 1mA | 10.2nC @ 4.5V | 720pF @ 10V | 1.5W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TSMT8 |
|
ZXMC4559DN8TAMOSFET N/P-CH 60V 3.6A/2.6A 8SO |
572 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | Logic Level Gate | 60V | 3.6A, 2.6A | 55mOhm @ 4.5A, 10V | 1V @ 250µA (Min) | 20.4nC @ 10V | 1063pF @ 30V, 1021pF @ 30V | 1.25W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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ZXMP6A16DN8QTAMOSFET 2P-CH 60V 2.9A 8SO |
500 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 60V | 2.9A | 85mOhm @ 2.9A, 10V | 1V @ 250µA (Min) | 24.2nC @ 10V | 1021pF @ 30V | 1.81W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
ZXMP3A16DN8TAMOSFET 2P-CH 30V 4.2A 8SO |
58 | - |
|
Технический лист |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.2A | 45mOhm @ 4.2A, 10V | 1V @ 250µA (Min) | 29.6nC @ 10V | 1022pF @ 15V | 1.8W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
BUK7K8R7-40EXMOSFET 2N-CH 40V 30A LFPAK56D |
80 | - |
|
Технический лист |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 30A | 8.5mOhm @ 15A, 10V | 4V @ 1mA | 21.8nC @ 10V | 1439pF @ 25V | 53W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q100 | Surface Mount | LFPAK56D |
|
BUK9K20-80EXMOSFET 2N-CH 80V 23A LFPAK56D |
50 | - |
|
Технический лист |
- | SOT-1205, 8-LFPAK56 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 80V | 23A (Ta) | 17mOhm @ 10A, 10V | 2.1V @ 1mA | 25.5nC @ 5V | 3462pF @ 25V | 68W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | LFPAK56D |
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ALD114904SALMOSFET 2N-CH 10.6V 8SOIC |
49 | - |
|
Технический лист |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD114913SALMOSFET 2N-CH 10.6V 8SOIC |
100 | - |
|
Технический лист |
EPAD® | 8-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 8-SOIC |
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ALD1105SBLMOSFET 2N/2P-CH 10.6V 14SOIC |
63 | - |
|
Технический лист |
- | 14-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N and 2 P-Channel Matched Pair | - | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 14-SOIC |
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ALD1107SBLMOSFET 4P-CH 10.6V 14SOIC |
50 | - |
|
Технический лист |
- | 14-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 10.6V | - | 1800Ohm @ 5V | 1.2V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 14-SOIC |
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ALD110800PCLMOSFET 4N-CH 10.6V 16PDIP |
30 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | - | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
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ALD310708SCLMOSFET 4P-CH 8V 16SOIC |
45 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Surface Mount | 16-SOIC |
|
ALD1103SBLMOSFET 2N/2P-CH 10.6V 14SOIC |
56 | - |
|
Технический лист |
- | 14-SOIC (0.154", 3.90mm Width) | Tube | Active | MOSFET (Metal Oxide) | 2 N and 2 P-Channel Matched Pair | - | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Surface Mount | 14-SOIC |
|
ALD1101PALMOSFET 2N-CH 10.6V 8PDIP |
55 | - |
|
Технический лист |
- | 8-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Matched Pair | - | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 8-PDIP |
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ALD310700APCLMOSFET 4P-CH 8V 16PDIP |
43 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 P-Channel, Matched Pair | - | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | - | - | Through Hole | 16-PDIP |
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ALD210800APCLMOSFET 4N-CH 10.6V 0.08A 16PDIP |
25 | - |
|
Технический лист |
EPAD®, Zero Threshold™ | 16-DIP (0.300", 7.62mm) | Tube | Active | MOSFET (Metal Oxide) | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | - | - | Through Hole | 16-PDIP |
|
SH68N65DM6AGMOSFET 2N-CH 650V 64A 9ACEPACK |
17 | - |
|
Технический лист |
ECOPACK® | 9-PowerSMD | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 650V | 64A (Tc) | 41mOhm @ 23A, 10V | 4.75V @ 250µA | 116nC @ 10V | 5900pF @ 100V | 379W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 9-ACEPACK SMIT |
