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FET, массивы MOSFET

Производитель Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка

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Фото Номер производителя Наличие Цена Количество Технический лист Серия Корпус/корпус Упаковка Состояние продукта Технология Конфигурация Характеристика FET Напряжение сток-исток (Vdss) Ток - Непрерывный сток (Id) @ 25°C Rds On (Макс.) @ Id, Vgs Vgs(th) (Макс.) @ Id Заряд затвора (Qg) (Макс.) @ Vgs Входная емкость (Ciss) (Макс.) @ Vds Мощность - макс. Рабочая температура Марка Квалификация Тип крепления Устройство поставщика Упаковка
CAB500M17HM3

CAB500M17HM3

MOSFET 2N-CH 1700V 653A MODULE

Wolfspeed, Inc.

6,839 -
CAB500M17HM3

Технический лист

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 653A (Tc) 2.6mOhm @ 500A, 15V 3.6V @ 203mA 1992nC @ 15V 64900pF @ 1200V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
PMDXB1200UPEZ

PMDXB1200UPEZ

MOSFET 2P-CH 30V 0.41A 6DFN

Nexperia USA Inc.

797 -
PMDXB1200UPEZ

Технический лист

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 410mA 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2nC @ 4.5V 43.2pF @ 15V 285mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
BSS8402DW-TP

BSS8402DW-TP

MOSFET N/P-CH 60V/50V SOT363

Micro Commercial Co

896 -
BSS8402DW-TP

Технический лист

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V, 50V 115mA, 130mA 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V 2.5V @ 250µA, 2V @ 250µA - 50pF @ 25V, 30pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
QH8JA1TCR

QH8JA1TCR

MOSFET 2P-CH 20V 5A TSMT8

Rohm Semiconductor

59 -
QH8JA1TCR

Технический лист

- 8-SMD, Flat Leads Tape & Reel (TR) Active - 2 P-Channel (Dual) - 20V 5A 38mOhm @ 5A, 4.5V 1.2V @ 1mA 10.2nC @ 4.5V 720pF @ 10V 1.5W -55°C ~ 150°C (TJ) - - Surface Mount TSMT8
ZXMC4559DN8TA

ZXMC4559DN8TA

MOSFET N/P-CH 60V 3.6A/2.6A 8SO

Diodes Incorporated

572 -
ZXMC4559DN8TA

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V 3.6A, 2.6A 55mOhm @ 4.5A, 10V 1V @ 250µA (Min) 20.4nC @ 10V 1063pF @ 30V, 1021pF @ 30V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ZXMP6A16DN8QTA

ZXMP6A16DN8QTA

MOSFET 2P-CH 60V 2.9A 8SO

Diodes Incorporated

500 -
ZXMP6A16DN8QTA

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 60V 2.9A 85mOhm @ 2.9A, 10V 1V @ 250µA (Min) 24.2nC @ 10V 1021pF @ 30V 1.81W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
ZXMP3A16DN8TA

ZXMP3A16DN8TA

MOSFET 2P-CH 30V 4.2A 8SO

Diodes Incorporated

58 -
ZXMP3A16DN8TA

Технический лист

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 4.2A 45mOhm @ 4.2A, 10V 1V @ 250µA (Min) 29.6nC @ 10V 1022pF @ 15V 1.8W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
BUK7K8R7-40EX

BUK7K8R7-40EX

MOSFET 2N-CH 40V 30A LFPAK56D

Nexperia USA Inc.

80 -
BUK7K8R7-40EX

Технический лист

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 40V 30A 8.5mOhm @ 15A, 10V 4V @ 1mA 21.8nC @ 10V 1439pF @ 25V 53W -55°C ~ 175°C (TJ) Automotive AEC-Q100 Surface Mount LFPAK56D
BUK9K20-80EX

BUK9K20-80EX

MOSFET 2N-CH 80V 23A LFPAK56D

Nexperia USA Inc.

50 -
BUK9K20-80EX

Технический лист

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 80V 23A (Ta) 17mOhm @ 10A, 10V 2.1V @ 1mA 25.5nC @ 5V 3462pF @ 25V 68W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56D
ALD114904SAL

ALD114904SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

49 -
ALD114904SAL

Технический лист

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD114913SAL

ALD114913SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.

100 -
ALD114913SAL

Технический лист

EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
ALD1105SBL

ALD1105SBL

MOSFET 2N/2P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.

63 -
ALD1105SBL

Технический лист

- 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V - 500Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
ALD1107SBL

ALD1107SBL

MOSFET 4P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.

50 -
ALD1107SBL

Технический лист

- 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 10.6V - 1800Ohm @ 5V 1.2V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
ALD110800PCL

ALD110800PCL

MOSFET 4N-CH 10.6V 16PDIP

Advanced Linear Devices Inc.

30 -
ALD110800PCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
ALD310708SCL

ALD310708SCL

MOSFET 4P-CH 8V 16SOIC

Advanced Linear Devices Inc.

45 -
ALD310708SCL

Технический лист

EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
ALD1103SBL

ALD1103SBL

MOSFET 2N/2P-CH 10.6V 14SOIC

Advanced Linear Devices Inc.

56 -
ALD1103SBL

Технический лист

- 14-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N and 2 P-Channel Matched Pair - 10.6V 40mA, 16mA 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 14-SOIC
ALD1101PAL

ALD1101PAL

MOSFET 2N-CH 10.6V 8PDIP

Advanced Linear Devices Inc.

55 -
ALD1101PAL

Технический лист

- 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
ALD310700APCL

ALD310700APCL

MOSFET 4P-CH 8V 16PDIP

Advanced Linear Devices Inc.

43 -
ALD310700APCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
ALD210800APCL

ALD210800APCL

MOSFET 4N-CH 10.6V 0.08A 16PDIP

Advanced Linear Devices Inc.

25 -
ALD210800APCL

Технический лист

EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA 25Ohm 10mV @ 10µA - 15pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
SH68N65DM6AG

SH68N65DM6AG

MOSFET 2N-CH 650V 64A 9ACEPACK

STMicroelectronics

17 -
SH68N65DM6AG

Технический лист

ECOPACK® 9-PowerSMD Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 650V 64A (Tc) 41mOhm @ 23A, 10V 4.75V @ 250µA 116nC @ 10V 5900pF @ 100V 379W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-ACEPACK SMIT
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